PJP60R290E_T0_00001

PJP60R290E_T0_00001

Images are for reference only
See Product Specifications

PJP60R290E_T0_00001
Описание:
600V N-CHANNEL SUPER JUNCTION MO
Упаковка:
Tube
Datasheet:
PJP60R290E_T0_00001 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:PJP60R290E_T0_00001
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Panjit International Inc.
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):9b63fe166715207d51445c226ada9c46
Current - Continuous Drain (Id) @ 25°C:bc68fd2d45a988ad82ee62ec41cdf945
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:7e1955e427a945e73d48d4ae088c6701
Vgs(th) (Max) @ Id:9238c44d66e9d51854326c16b3397896
Gate Charge (Qg) (Max) @ Vgs:b6ab5da133ad4bb28468094ad6d872e7
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:3f7d59db9d32d3d10d0f31e3fc1cb7ac
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):7bc4eb9a0aa9118ad309dde6bca18c35
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:506558024381a3c368cb88e9e94f6845
Supplier Device Package:9b3b590b14408ced9e56cc56696084a1
Package / Case:46bb638de2ea693de650d7f1c3115468
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
H7N1004FN-E
H7N1004FN-E
Renesas Electronics America Inc
N-CHANNEL POWER MOSFET
UPA1559H(1)-AZ
UPA1559H(1)-AZ
Renesas Electronics America Inc
N-CHANNEL POWER MOSFET
BSZ013NE2LS5IATMA1
BSZ013NE2LS5IATMA1
Infineon Technologies
MOSFET N-CH 25V 32A/40A TSDSON
IPD50P04P4L11ATMA1
IPD50P04P4L11ATMA1
Infineon Technologies
MOSFET P-CH 40V 50A TO252-3
PH3120L,115-NXP
PH3120L,115-NXP
NXP USA Inc.
POWER FIELD-EFFECT TRANSISTOR, 1
PJD60R620E_L2_00001
PJD60R620E_L2_00001
Panjit International Inc.
600V N-CHANNEL SUPER JUNCTION MO
2N6761
2N6761
Harris Corporation
N-CHANNEL POWER MOSFET
DMTH8008LFG-13
DMTH8008LFG-13
Diodes Incorporated
MOSFET BVDSS: 61V~100V POWERDI33
BSZ0803LSATMA1
BSZ0803LSATMA1
Infineon Technologies
MOSFET N-CH 100V 9A/40A TSDSON
SIHF9640S-GE3
SIHF9640S-GE3
Vishay Siliconix
MOSFET P-CH 200V 11A D2PAK
NVD360N65S3T4G
NVD360N65S3T4G
onsemi
SF3 EASY AUTO 360MOHM DPAK
FQPF3N30
FQPF3N30
onsemi
MOSFET N-CH 300V 1.95A TO220F
Вас также может заинтересовать
P4KE11CAS_AY_00001
P4KE11CAS_AY_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
P4SMA62AS_R1_00001
P4SMA62AS_R1_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
P4SMA13A_R1_00001
P4SMA13A_R1_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
P6SMBJ14A-AU_R1_000A1
P6SMBJ14A-AU_R1_000A1
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
1.5KE15AS_AY_00001
1.5KE15AS_AY_00001
Panjit International Inc.
TRANSIENT VOLTAGE SUPPRESSOR
MBR30100FCT_T0_00001
MBR30100FCT_T0_00001
Panjit International Inc.
ITO-220AB, SKY
ERT2JF_R1_00001
ERT2JF_R1_00001
Panjit International Inc.
SURFACE MOUNT SUPER FAST RECOVER
MER802T_T0_00601
MER802T_T0_00601
Panjit International Inc.
200V,SUPER FAST RECOVERY RECTIFI
MMSZ5232BS_R1_00001
MMSZ5232BS_R1_00001
Panjit International Inc.
SOD-323, ZENER
MMSZ5256B-AU_R1_000A1
MMSZ5256B-AU_R1_000A1
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
BC849BW_R1_00001
BC849BW_R1_00001
Panjit International Inc.
TRANS NPN 30V 0.1A SOT323
PJQ4476AP-AU_R2_000A1
PJQ4476AP-AU_R2_000A1
Panjit International Inc.
100V N-CHANNEL ENHANCEMENT MODE