PJQ1917_R1_00001

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Mfr. #:

PJQ1917_R1_00001

Mfr.:

Panjit International Inc.

Описание:

20V P-CHANNEL ENHANCEMENT MODE M

Упаковка:

Tape & Reel (TR)

Datasheet:

PJQ1917_R1_00001 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PJQ1917_R1_00001
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Panjit International Inc.
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	9945a529f9f3f7e23d6cd49cab56133a
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	1d4b1d1d0414ed964cb9de7f5a150f63
Current - Continuous Drain (Id) @ 25°C:	536c4c20cb2fb8e9f0855c4c82bfb110
Drive Voltage (Max Rds On, Min Rds On):	2a209c50c2dd1678cb3d568dbbce6592
Rds On (Max) @ Id, Vgs:	85d19bc3e3fb88f3c40d6ed0111ca002
Vgs(th) (Max) @ Id:	fb74aa2ff10bb77cff79f565b135beed
Gate Charge (Qg) (Max) @ Vgs:	dc6ce2cf0e05bd8af0762f62c2bdbf07
Vgs (Max):	141ce97fa4644284a9f0bfb5e7811ba1
Input Capacitance (Ciss) (Max) @ Vds:	19749ed6a26fa39329fb5e7df1d3372a
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	ae2350350ba6e5a69d2dc91b08eae7b5
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	cf7fc7038e85b59b6d183e7d8a726a3e
Package / Case:	e86f97ca68c16e895a6c8c78eb3f8e4c