PJQ4416EP_R2_00001

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Mfr. #:

PJQ4416EP_R2_00001

Mfr.:

Panjit International Inc.

Описание:

20V N-CHANNEL ENHANCEMENT MODE M

Упаковка:

Tape & Reel (TR)

Datasheet:

PJQ4416EP_R2_00001 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PJQ4416EP_R2_00001
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Panjit International Inc.
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	1d4b1d1d0414ed964cb9de7f5a150f63
Current - Continuous Drain (Id) @ 25°C:	0fc545e28d9a44a92816a8e542e03a18
Drive Voltage (Max Rds On, Min Rds On):	72f93dd3e24aa2b695818cce6ee9270b
Rds On (Max) @ Id, Vgs:	22464fa061511b7032ef7c36e8458a12
Vgs(th) (Max) @ Id:	fb74aa2ff10bb77cff79f565b135beed
Gate Charge (Qg) (Max) @ Vgs:	e6d0de9744f8b47572467d9dd9758ef9
Vgs (Max):	10c38ebf444fc04b1bb74eda03c48b9f
Input Capacitance (Ciss) (Max) @ Vds:	012ccc86966a21f674f4666544acc6d9
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	e876221dff6195c0031ad6243ff5acbc
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	1ed2412fd9fde5296a64c275c290b727
Package / Case:	67fd376bd79eda48286f8f6e0131d8c9