PJQ4476AP_R2_00001

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Mfr. #:

PJQ4476AP_R2_00001

Mfr.:

Panjit International Inc.

Описание:

100V N-CHANNEL ENHANCEMENT MODE

Упаковка:

Tape & Reel (TR)

Datasheet:

PJQ4476AP_R2_00001 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PJQ4476AP_R2_00001
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Panjit International Inc.
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:	abd8101dbc9f94a142bd7fd6ca7d39ae
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	08b0fa8ba845552b5cd8069b73f351f5
Vgs(th) (Max) @ Id:	bae68a70e94fb31c33c772f4fdf89b99
Gate Charge (Qg) (Max) @ Vgs:	bb76162d41a5892918594518b268849a
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	013b86cee2ec1c0bb4596b5b7ef71633
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	f359de36611ca72928f2841c52473ef5
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	1ed2412fd9fde5296a64c275c290b727
Package / Case:	67fd376bd79eda48286f8f6e0131d8c9