PJQ5425_R2_00001

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Mfr. #:

PJQ5425_R2_00001

Mfr.:

Panjit International Inc.

Описание:

30V P-CHANNEL ENHANCEMENT MODE M

Упаковка:

Tape & Reel (TR)

Datasheet:

PJQ5425_R2_00001 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PJQ5425_R2_00001
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Panjit International Inc.
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	9945a529f9f3f7e23d6cd49cab56133a
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:	d5b5898ed5a2ca0f6456466974f35c5a
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	4221323dfb7a741b5f8865b44b9e81c4
Vgs(th) (Max) @ Id:	bae68a70e94fb31c33c772f4fdf89b99
Gate Charge (Qg) (Max) @ Vgs:	a6bdedf49bb1b850d271b5290b9a6756
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	d7cd9b3987889414b39c98c252d3fb49
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	9caac5cd7663a43ac8e16fc7818823e7
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	c0f7da20502dc5d0e91586b134b76e65
Package / Case:	67fd376bd79eda48286f8f6e0131d8c9