PJQ5474A_R2_00001

PJQ5474A_R2_00001

Images are for reference only
See Product Specifications

PJQ5474A_R2_00001
Описание:
100V N-CHANNEL ENHANCEMENT MODE
Упаковка:
Tape & Reel (TR)
Datasheet:
PJQ5474A_R2_00001 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:PJQ5474A_R2_00001
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Panjit International Inc.
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:66ab69b459c614644a63dc0c3e22ff0d
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:a36ea8815a57f6e07959b3d06e21405e
Vgs(th) (Max) @ Id:bae68a70e94fb31c33c772f4fdf89b99
Gate Charge (Qg) (Max) @ Vgs:8efc990a780d589424d353135dbf1bb9
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:63334cfd06a9d66f33fee51374269fcb
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):f19e87938fb156c3d22c87ecb200167e
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:c0f7da20502dc5d0e91586b134b76e65
Package / Case:67fd376bd79eda48286f8f6e0131d8c9
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
APT8M100B
APT8M100B
Microchip Technology
MOSFET N-CH 1000V 8A TO247
2SK3668-ZK-E1-AY
2SK3668-ZK-E1-AY
Renesas Electronics America Inc
POWER FIELD-EFFECT TRANSISTOR
IPD082N10N3GATMA1
IPD082N10N3GATMA1
Infineon Technologies
MOSFET N-CH 100V 80A TO252-3
STW7N90K5
STW7N90K5
STMicroelectronics
MOSFET N-CH 900V 7A TO247-3
IRFU7746PBF
IRFU7746PBF
Infineon Technologies
MOSFET N-CH 75V 56A IPAK
IRF40DM229
IRF40DM229
Infineon Technologies
MOSFET N-CH 40V 159A DIRECTFET
BSD214SNH6327
BSD214SNH6327
Infineon Technologies
BSD314 - 250V-600V SMALL SIGNAL/
IRF7433PBF
IRF7433PBF
Infineon Technologies
MOSFET P-CH 12V 8.9A 8SO
IPB13N03LB
IPB13N03LB
Infineon Technologies
MOSFET N-CH 30V 30A D2PAK
IXTA180N085T
IXTA180N085T
IXYS
MOSFET N-CH 85V 180A TO263
IXTU64N055T
IXTU64N055T
IXYS
MOSFET N-CH 55V 64A TO251
STL9N80K5
STL9N80K5
STMicroelectronics
MOSFET N-CH 800V 7A POWERFLAT
Вас также может заинтересовать
P4HE13A_R1_00001
P4HE13A_R1_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
P6SMBJ130AS_R1_00001
P6SMBJ130AS_R1_00001
Panjit International Inc.
TRANSIENT VOLTAGE SUPPRESSOR
PEC2305C2A_R1_00001
PEC2305C2A_R1_00001
Panjit International Inc.
VERY LOW CAPACITANCE ESD PROTECT
1.5SMC22CA_R1_00001
1.5SMC22CA_R1_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION TRANSI
1.5SMCJ7.5A_R1_00001
1.5SMCJ7.5A_R1_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
5KP85CA_R2_00001
5KP85CA_R2_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION TRANSI
SB3045CT_T0_00001
SB3045CT_T0_00001
Panjit International Inc.
SCHOTTKY BARRIER RECTIFIER
BR220_R1_00001
BR220_R1_00001
Panjit International Inc.
SMA, SKY
MMBZ5247BTW_R1_00001
MMBZ5247BTW_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
MMSZ5262A_R1_00001
MMSZ5262A_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
1SMB3EZ27-AU_R1_000A1
1SMB3EZ27-AU_R1_000A1
Panjit International Inc.
GLASS PASSIVATED JUNCTION SILICO
MMBZ5246BW_R1_00001
MMBZ5246BW_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD