PJW8N03_R2_00001

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Mfr. #:

PJW8N03_R2_00001

Mfr.:

Panjit International Inc.

Описание:

30V N-CHANNEL ENHANCEMENT MODE M

Упаковка:

Tape & Reel (TR)

Datasheet:

PJW8N03_R2_00001 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PJW8N03_R2_00001
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Panjit International Inc.
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:	3c0cff3895a48d55dadb1e9a2256977c
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	06c5d73d9f9ae3fefb8a9f6e4705b40b
Vgs(th) (Max) @ Id:	1bc9b99dde8f1e7089fd72c1a9c0d311
Gate Charge (Qg) (Max) @ Vgs:	666f69b0787d185f39c0fd5e9955af29
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	7d56e66eb391a66557113af00ae9022e
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	cdc2198167cce729323f8b47eb7b2775
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	560b42d335ed49abb01a005a967a12be
Package / Case:	6dc6563daf7a3377ce355c876bce0c9b