QDT8A06S_S2_00001

QDT8A06S_S2_00001

Images are for reference only
See Product Specifications

QDT8A06S_S2_00001
Описание:
PLANAR STRUCTURED SUPERFAST RECO
Упаковка:
Tape & Reel (TR)
Datasheet:
QDT8A06S_S2_00001 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:QDT8A06S_S2_00001
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Panjit International Inc.
Упаковка:Tape & Reel (TR)
Product Status:ec30c235d0eb792797af1aa1d11759a7
Diode Type:eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):9b63fe166715207d51445c226ada9c46
Current - Average Rectified (Io):aef4533582e3b78f1bc369aaf4ae62ba
Voltage - Forward (Vf) (Max) @ If:12386f3c8962f0fc5cbab0f8ee7e0161
Speed:cfc142f366adaf55cb22cbcc3f0094b8
Reverse Recovery Time (trr):d97596ebeed86fbe4f4e0eb49a6e02fc
Current - Reverse Leakage @ Vr:4b88d1c2cf26197f10a93c9fe12962bb
Capacitance @ Vr, F:336d5ebc5436534e61d16e63ddfca327
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
Supplier Device Package:26334f21813abf4634f508e2476262a0
Operating Temperature - Junction:8fc8607d1eb9d0c756392186b450f26c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
BAV202-GS18
BAV202-GS18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 250MA SOD80
S15GCHV7G
S15GCHV7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 15A DO214AB
CDBF0330
CDBF0330
Comchip Technology
DIODE SCHOTTKY 30V 350MA 1005
S2KA-13-F
S2KA-13-F
Diodes Incorporated
DIODE GEN PURP 800V 1.5A SMA
RS2GHE3_A/I
RS2GHE3_A/I
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1.5A DO214AA
STTA2006P
STTA2006P
STMicroelectronics
DIODE GEN PURP 600V 20A SOD93-2
ZLLS1000TC
ZLLS1000TC
Diodes Incorporated
DIODE SCHOTTKY 40V 1.16A SOT23-3
MPG06JHE3/54
MPG06JHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A MPG06
JAN1N6677UR-1
JAN1N6677UR-1
Microchip Technology
DIODE SCHOTTKY 40V 200MA DO213AA
JAN1N6857UR-1/TR
JAN1N6857UR-1/TR
Microchip Technology
DIODE SMALL-SIGNAL SCHOTTKY
CRG04A,LQ(M
CRG04A,LQ(M
Toshiba Semiconductor and Storage
MOSFET N-CH
FM4003W
FM4003W
Rectron USA
DIODE 1A 200V SMX
Вас также может заинтересовать
P4KE75C_R2_00001
P4KE75C_R2_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION TRANSI
P4HE43A_R1_00001
P4HE43A_R1_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
1.5SMC120A_R1_00001
1.5SMC120A_R1_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION TRANSI
SM5S33A-AU_R2_000A1
SM5S33A-AU_R2_000A1
Panjit International Inc.
3.6KW SURFACE MOUNT TRANSIENT VO
1.5KE16CA_R2_00001
1.5KE16CA_R2_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION TRANSI
MER1DMA_R2_00001
MER1DMA_R2_00001
Panjit International Inc.
200V,SUPER FAST RECOVERY RECTIFI
MBR3200_R2_00001
MBR3200_R2_00001
Panjit International Inc.
SCHOTTKY BARRIER RECTIFIERS
ED303S_S2_00001
ED303S_S2_00001
Panjit International Inc.
SUPERFAST RECOVERY RECTIFIERS
BZT52-B10_R1_00001
BZT52-B10_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
BZT52-C33S-AU_R1_000A1
BZT52-C33S-AU_R1_000A1
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
PZS515V3BAS-AU_R1_000A1
PZS515V3BAS-AU_R1_000A1
Panjit International Inc.
SILICON ZENER DIODE
PJP4NA60_T0_00001
PJP4NA60_T0_00001
Panjit International Inc.
600V N-CHANNEL MOSFET