QR1006D_R2_00001

QR1006D_R2_00001

Images are for reference only
See Product Specifications

QR1006D_R2_00001
Описание:
PLANAR STRUCTURED SUPERFAST RECO
Упаковка:
Tape & Reel (TR)
Datasheet:
QR1006D_R2_00001 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:QR1006D_R2_00001
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Panjit International Inc.
Упаковка:Tape & Reel (TR)
Product Status:ec30c235d0eb792797af1aa1d11759a7
Diode Type:eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):9b63fe166715207d51445c226ada9c46
Current - Average Rectified (Io):600f6857f966a3ecb5ca3022150669c1
Voltage - Forward (Vf) (Max) @ If:4c84146f1a5ea03c9b95b1a7d91cd279
Speed:cfc142f366adaf55cb22cbcc3f0094b8
Reverse Recovery Time (trr):2555a458d4823a2c0ed644607c9982df
Current - Reverse Leakage @ Vr:72b4176b05723fce26d1e3c7b53a6320
Capacitance @ Vr, F:336d5ebc5436534e61d16e63ddfca327
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:99446f4470b43888d0c78d7d2cdfc956
Supplier Device Package:9e22a2b9016f93d429537021d03d41c1
Operating Temperature - Junction:8fc8607d1eb9d0c756392186b450f26c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
WNSC6D08650Q
WNSC6D08650Q
WeEn Semiconductors
SILICON CARBIDE SCHOTTKY DIODE I
11DQ03
11DQ03
SMC Diode Solutions
DIODE SCHOTTKY 30V 1.1A DO41
PDS3200Q-13
PDS3200Q-13
Diodes Incorporated
DIODE SCHOTTKY 200V 3A POWERDI5
AU1PM-M3/85A
AU1PM-M3/85A
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 1000V 1A DO220AA
VS-82PF120
VS-82PF120
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 120V 80A DO203AB
20ETF02STRL
20ETF02STRL
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 20A D2PAK
1N914_T26A
1N914_T26A
onsemi
DIODE GEN PURP 100V 200MA DO35
GI250-4HE3/54
GI250-4HE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 4KV 250MA DO204
V10150SHM3/4W
V10150SHM3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 10A 150V TO-220AB
1N4007-N-2-3-AP
1N4007-N-2-3-AP
Micro Commercial Co
DIODE GEN PURP 1KV 1A DO-41
1N4934GHR1G
1N4934GHR1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
D121N20BXPSA1
D121N20BXPSA1
Infineon Technologies
DIODE GEN PURP 2KV 230A
Вас также может заинтересовать
1.5KE68AS_AY_00001
1.5KE68AS_AY_00001
Panjit International Inc.
TRANSIENT VOLTAGE SUPPRESSOR
MMBD3004BRM_S2_00001
MMBD3004BRM_S2_00001
Panjit International Inc.
SURFACE MOUNT HIGH VOLTAGE SWITC
MBR1640FCT_T0_00001
MBR1640FCT_T0_00001
Panjit International Inc.
ISOLATION SCHOTTKY BARRIER RECTI
S2MGF-AU_R1_000A1
S2MGF-AU_R1_000A1
Panjit International Inc.
SMBF, GENERAL
BZX84B3V9_R1_00001
BZX84B3V9_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
1SMA4738_R1_00001
1SMA4738_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
BZX84C9V1_R1_00001
BZX84C9V1_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
1N5344B_R2_00001
1N5344B_R2_00001
Panjit International Inc.
SILICON ZENER DIODE
1SMB2EZ27_R1_00001
1SMB2EZ27_R1_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION SILICO
1N4737A_R2_00001
1N4737A_R2_00001
Panjit International Inc.
SILICON ZENER DIODE
PZS51A14CS_R1_00001
PZS51A14CS_R1_00001
Panjit International Inc.
SILICON ZENER DIODE
PJU1NA60_T0_00001
PJU1NA60_T0_00001
Panjit International Inc.
MOSFET