QR806D_R2_00001

QR806D_R2_00001

Images are for reference only
See Product Specifications

QR806D_R2_00001
Описание:
PLANAR STRUCTURED SUPERFAST RECO
Упаковка:
Tape & Reel (TR)
Datasheet:
QR806D_R2_00001 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:QR806D_R2_00001
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Panjit International Inc.
Упаковка:Tape & Reel (TR)
Product Status:ec30c235d0eb792797af1aa1d11759a7
Diode Type:eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):9b63fe166715207d51445c226ada9c46
Current - Average Rectified (Io):aef4533582e3b78f1bc369aaf4ae62ba
Voltage - Forward (Vf) (Max) @ If:9482523bcb91f9082c2a177278eb3ef8
Speed:cfc142f366adaf55cb22cbcc3f0094b8
Reverse Recovery Time (trr):085935479c57c52499370412c48e3d38
Current - Reverse Leakage @ Vr:72b4176b05723fce26d1e3c7b53a6320
Capacitance @ Vr, F:336d5ebc5436534e61d16e63ddfca327
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:99446f4470b43888d0c78d7d2cdfc956
Supplier Device Package:9e22a2b9016f93d429537021d03d41c1
Operating Temperature - Junction:8fc8607d1eb9d0c756392186b450f26c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
ES1B
ES1B
onsemi
DIODE GEN PURP 100V 1A SMA
RHRD460S9A
RHRD460S9A
Fairchild Semiconductor
RECTIFIER DIODE
SE30PAB-M3/I
SE30PAB-M3/I
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 3A DO221BC
SB2D-M3/52T
SB2D-M3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 2A DO214AA
MUR110S
MUR110S
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO214AA
ES1F R3G
ES1F R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 1A DO214AC
6A20G
6A20G
Taiwan Semiconductor Corporation
6A, 200V, STANDARD RECOVERY RECT
S5W-CT
S5W-CT
Diotec Semiconductor
CUT-TAPE VERSION. STANDARD RECO
VS-MBRB1645PBF
VS-MBRB1645PBF
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 45V 16A D2PAK
SIDC08D60C6
SIDC08D60C6
Infineon Technologies
DIODE GEN PURP 600V 30A WAFER
SCS212AJHRTLL
SCS212AJHRTLL
Rohm Semiconductor
DIODE SCHOTTKY 650V 12A TO263AB
RB540VM-30FHTE-17
RB540VM-30FHTE-17
Rohm Semiconductor
SCHOTTKY BARRIER DIODES, 30V, 20
Вас также может заинтересовать
P4SMAJ30AS_R1_00001
P4SMAJ30AS_R1_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
P6SMB18A_R1_00001
P6SMB18A_R1_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
P4SMA62C_R1_00001
P4SMA62C_R1_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
5KP70A_R2_00001
5KP70A_R2_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION TRANSI
BAV99BRW_R1_00001
BAV99BRW_R1_00001
Panjit International Inc.
QUAD SURFACE MOUNT SWITCHING DIO
MBR1645FCT_T0_00001
MBR1645FCT_T0_00001
Panjit International Inc.
ISOLATION SCHOTTKY BARRIER RECTI
SVM1550U_R1_00001
SVM1550U_R1_00001
Panjit International Inc.
LOW VF SCHOTTKY RECTIFIER
1SMA5938-AU_R1_000A1
1SMA5938-AU_R1_000A1
Panjit International Inc.
SILICON ZENER DIODE
BZX84B11-AU_R1_000A1
BZX84B11-AU_R1_000A1
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
PZ1AH7V5B_R1_00001
PZ1AH7V5B_R1_00001
Panjit International Inc.
SILICON ZENER DIODE
PJQ5850-AU_R2_000A1
PJQ5850-AU_R2_000A1
Panjit International Inc.
40V DUAL N-CHANNEL ENHANCEMENT M
PJW2P10A_R2_00001
PJW2P10A_R2_00001
Panjit International Inc.
100V P-CHANNEL ENHANCEMENT MODE