SK16F_R1_00001

SK16F_R1_00001

Images are for reference only
See Product Specifications

SK16F_R1_00001
Описание:
SURFACE MOUNT SCHOTTKY BARRIER R
Упаковка:
Tape & Reel (TR)
Datasheet:
SK16F_R1_00001 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SK16F_R1_00001
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Panjit International Inc.
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:aaa0376e51a49c9332dde4f69ea77455
Voltage - DC Reverse (Vr) (Max):5568a11e95c42251b4839598cb5b4518
Current - Average Rectified (Io):0723dfd10075aee37a1804a728349dc3
Voltage - Forward (Vf) (Max) @ If:9f9e473a26e8e760d1719712eb6ac05c
Speed:cfc142f366adaf55cb22cbcc3f0094b8
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Current - Reverse Leakage @ Vr:84e41b68984b9384f4946c064a2e7110
Capacitance @ Vr, F:315ceeab95743393e181ecc8ad265b12
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:60f41e0ae39a6a041dae5b7e0b98a420
Supplier Device Package:c1fef95175a15930233ad51bedca058a
Operating Temperature - Junction:c175279a77a6d2f4f996c08dd5d3786c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
BAS40E6327HTSA1
BAS40E6327HTSA1
Infineon Technologies
DIODE SCHOTTKY 40V 120MA SOT23-3
HSU83-2TRF-E
HSU83-2TRF-E
Renesas Electronics America Inc
DIODE FOR HIGH VOLTAGE SWITCHING
MMDL6050T1G
MMDL6050T1G
onsemi
DIODE GEN PURP 70V 200MA SOD323
V10P10HM3_A/I
V10P10HM3_A/I
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 10A TO277A
FR1AAFC_R1_00001
FR1AAFC_R1_00001
Panjit International Inc.
SURFACE MOUNT FAST RECOVERY RECT
FR102GP-TP
FR102GP-TP
Micro Commercial Co
DIODE GPP 1A DO-41
SE20PB-M3/85A
SE20PB-M3/85A
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 1.6A DO220AA
R2120
R2120
Microchip Technology
RECTIFIER
1N2138RA
1N2138RA
Microchip Technology
STD RECTIFIER
R7221805ASOO
R7221805ASOO
Powerex Inc.
DIODE GP 1.8KV 500A DO200AB
AU2PJHM3/87A
AU2PJHM3/87A
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 600V 1.6A TO277A
RGP10KE-M3/73
RGP10KE-M3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 800V 1A DO204AL
Вас также может заинтересовать
P4SMAJ28A-AU_R1_000A1
P4SMAJ28A-AU_R1_000A1
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
1.5SMC91AS_R1_00001
1.5SMC91AS_R1_00001
Panjit International Inc.
TRANSIENT VOLTAGE SUPPRESSOR
P6SMB120A_R1_00001
P6SMB120A_R1_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
1.5KE51A_R2_00001
1.5KE51A_R2_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION TRANSI
PCDB1065G1_T0_00001
PCDB1065G1_T0_00001
Panjit International Inc.
650V SIC SCHOTTKY BARRIER DIODE
BZT52-C30_R1_00001
BZT52-C30_R1_00001
Panjit International Inc.
SOD-123, ZENER
BZX84B20-AU_R1_000A1
BZX84B20-AU_R1_000A1
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
PZS51A5V3CS_R1_00001
PZS51A5V3CS_R1_00001
Panjit International Inc.
SILICON ZENER DIODE
3EZ20_R2_00001
3EZ20_R2_00001
Panjit International Inc.
SILICON ZENER DIODE
PJX8808_R1_00001
PJX8808_R1_00001
Panjit International Inc.
20V N-CHANNEL ENHANCEMENT MODE M
BSS123_R1_00001
BSS123_R1_00001
Panjit International Inc.
SOT-23, MOSFET
PJC7439_R1_00001
PJC7439_R1_00001
Panjit International Inc.
60V P-CHANNEL ENHANCEMENT MODE M