SS19L_R1_00001

SS19L_R1_00001

Images are for reference only
See Product Specifications

SS19L_R1_00001
Описание:
LOW VF SURFACE MOUNT SCHOTTKY RE
Упаковка:
Tape & Reel (TR)
Datasheet:
SS19L_R1_00001 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SS19L_R1_00001
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Panjit International Inc.
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:aaa0376e51a49c9332dde4f69ea77455
Voltage - DC Reverse (Vr) (Max):5c478428eb97b92c20415952e8880b4a
Current - Average Rectified (Io):0723dfd10075aee37a1804a728349dc3
Voltage - Forward (Vf) (Max) @ If:b9501008bcde2ad782c0720fb68fa9aa
Speed:cfc142f366adaf55cb22cbcc3f0094b8
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Current - Reverse Leakage @ Vr:0759dd3a810bb116a5b6b3b6f40f8c20
Capacitance @ Vr, F:336d5ebc5436534e61d16e63ddfca327
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:555ea86cb0cf881219ebf93c4aec37e1
Supplier Device Package:7a414fd9d8fc3b6ddbd9c6158b96f8f6
Operating Temperature - Junction:c175279a77a6d2f4f996c08dd5d3786c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
UJ3D06508TS
UJ3D06508TS
UnitedSiC
650V 8A SIC SCHOTTKY DIODE G3, T
VS-1N1202RA
VS-1N1202RA
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 12A DO203AA
VS-8EWF12S-M3
VS-8EWF12S-M3
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1.2KV 8A TO252
NTE5838
NTE5838
NTE Electronics, Inc
R-400 PRV 3A CATH CASE
BAS20-HE3-18
BAS20-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 200MA SOT23
S2K-HF
S2K-HF
Comchip Technology
RECTIFIER GEN PURP 800V 2A SMA
HSM390GE3/TR13
HSM390GE3/TR13
Microchip Technology
DIODE SCHOTTKY 90V 3A DO215AB
VS-301URA250
VS-301URA250
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 2.5KV 300A DO9
C4D05120E-TR
C4D05120E-TR
Wolfspeed, Inc.
DIODE SCHOTTKY 1.2KV 19A TO252-2
S3K M6G
S3K M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 3A DO214AB
MUR4L20HA0G
MUR4L20HA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 4A DO201AD
1SR139-400T-32
1SR139-400T-32
Rohm Semiconductor
DIODE GEN PURP 400V 1A MSR
Вас также может заинтересовать
P4SMA24CA_R1_00001
P4SMA24CA_R1_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
P6SMBJ28A-AU_R2_000A1
P6SMBJ28A-AU_R2_000A1
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
3.0SMCJ85A_R1_00001
3.0SMCJ85A_R1_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
MBR1680FCT_T0_00001
MBR1680FCT_T0_00001
Panjit International Inc.
ISOLATION SCHOTTKY BARRIER RECTI
SK54L_R1_00001
SK54L_R1_00001
Panjit International Inc.
SMC, SKY
SK24F_R2_00001
SK24F_R2_00001
Panjit International Inc.
SURFACE MOUNT SCHOTTKY BARRIER R
BZX84B39_R1_00001
BZX84B39_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
BZT52-C6V8S-AU_R1_000A1
BZT52-C6V8S-AU_R1_000A1
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
PZ1AH5V6B-AU_R1_000A1
PZ1AH5V6B-AU_R1_000A1
Panjit International Inc.
SILICON ZENER DIODE
3EZ10_R2_00001
3EZ10_R2_00001
Panjit International Inc.
SILICON ZENER DIODE
PJW5P06A-AU_R2_000A1
PJW5P06A-AU_R2_000A1
Panjit International Inc.
60V P-CHANNEL ENHANCEMENT MODE M
PJL9434A_R2_00001
PJL9434A_R2_00001
Panjit International Inc.
60V N-CHANNEL ENHANCEMENT MODE M