UF308G_R2_00001

UF308G_R2_00001

Images are for reference only
See Product Specifications

UF308G_R2_00001
Описание:
GLASS PASSIVATED JUNCTION ULTRAF
Упаковка:
Tape & Reel (TR)
Datasheet:
UF308G_R2_00001 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:UF308G_R2_00001
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Panjit International Inc.
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):faca79d8bea430c6302af6f2e2f59d12
Current - Average Rectified (Io):657dae0913ee12be6fb2a6f687aae1c7
Voltage - Forward (Vf) (Max) @ If:66fad5bf4f2103828f0098baefa8d854
Speed:cfc142f366adaf55cb22cbcc3f0094b8
Reverse Recovery Time (trr):91946025f0a916a238d5acd70f4252db
Current - Reverse Leakage @ Vr:d8b29e75e25e4cb91074b83ec97df76b
Capacitance @ Vr, F:315ceeab95743393e181ecc8ad265b12
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:3e6133272744ddc764059b0c9b6e5360
Supplier Device Package:770ae6406206d7dd099f2c38b75ee7c7
Operating Temperature - Junction:c175279a77a6d2f4f996c08dd5d3786c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
S2K-CT
S2K-CT
Diotec Semiconductor
CUT-TAPE VERSION. STANDARD RECO
IDH08G65C5XKSA2
IDH08G65C5XKSA2
Infineon Technologies
DIODE SCHOTTKY 650V 8A TO220-2-1
BAV17-TR
BAV17-TR
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 20V 250MA DO35
GL34DHE3/98
GL34DHE3/98
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 500MA DO213
AM01ZWK
AM01ZWK
Sanken
DIODE GEN PURP 200V 1A AXIAL
RU 3AMV
RU 3AMV
Sanken
DIODE GEN PURP 600V 1.5A AXIAL
VS-12TQ040SHM3
VS-12TQ040SHM3
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 15A D2PAK
VS-305URA250
VS-305URA250
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 2.5KV 300A DO9
ND260N12KHPSA1
ND260N12KHPSA1
Infineon Technologies
DIODE GP 1.2KV 104A BG-PB50ND-1
1N4942GP-E3/73
1N4942GP-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO204AL
ES1CL RTG
ES1CL RTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 1A SUB SMA
HS1ML RTG
HS1ML RTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 1A SUB SMA
Вас также может заинтересовать
P4SMAJ24CA_R1_00001
P4SMAJ24CA_R1_00001
Panjit International Inc.
SMA, TVS
1.5SMCJ18CA-AU_R1_000A1
1.5SMCJ18CA-AU_R1_000A1
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
P4KE24A_R2_00001
P4KE24A_R2_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION TRANSI
P4SMAJ160C_R1_00001
P4SMAJ160C_R1_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
P4HE48A_R1_00001
P4HE48A_R1_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
P6SMBJ210A_R1_00001
P6SMBJ210A_R1_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
1.5KE91AS_AY_00001
1.5KE91AS_AY_00001
Panjit International Inc.
TRANSIENT VOLTAGE SUPPRESSOR
SDM1045CS_L2_00001
SDM1045CS_L2_00001
Panjit International Inc.
SURFACE MOUNT SCHOTTKY BARRIER R
UF1603CT_T0_00001
UF1603CT_T0_00001
Panjit International Inc.
ULTRA FAST RECOVERY RECTIFIERS
SK26_R1_00001
SK26_R1_00001
Panjit International Inc.
SMB, SKY
1N4748A_R2_00001
1N4748A_R2_00001
Panjit International Inc.
SILICON ZENER DIODE
PJD25N06A-AU_L2_000A1
PJD25N06A-AU_L2_000A1
Panjit International Inc.
60V N-CHANNEL ENHANCEMENT MODE M