P3D06008I2

P3D06008I2

Images are for reference only
See Product Specifications

P3D06008I2
Описание:
DIODE SCHOTTKY 600V 8A TO220I-2
Упаковка:
Tube
Datasheet:
P3D06008I2 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:P3D06008I2
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:PN Junction Semiconductor
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:d3d951faf09c126fb512cb4341b7f72e
Voltage - DC Reverse (Vr) (Max):347f255197950e6b02089b73b6a8acdd
Current - Average Rectified (Io):db2cca1dd6bc4692b5dca9b27b61f3d8
Voltage - Forward (Vf) (Max) @ If:336d5ebc5436534e61d16e63ddfca327
Speed:4df7f8b19da044c5c3cd74ddd671445e
Reverse Recovery Time (trr):b680727d6f5a1bf2a32dc3e640b723ff
Current - Reverse Leakage @ Vr:5103f18f147d07d6d633997889f9d383
Capacitance @ Vr, F:336d5ebc5436534e61d16e63ddfca327
Mounting Type:336d5ebc5436534e61d16e63ddfca327
Package / Case:b834a1e83323d80a3fc56c006ce7401e
Supplier Device Package:b834a1e83323d80a3fc56c006ce7401e
Operating Temperature - Junction:57d4d9eedc2deb0e981150db4dec7a0a
In Stock: 990
Stock:
990 Can Ship Immediately
  • Делиться:
Для использования с
1N4004
1N4004
NTE Electronics, Inc
R-SI 400V 1A
PMEG60T20ELXD-QX
PMEG60T20ELXD-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
BYC5D-500,127
BYC5D-500,127
NXP USA Inc.
NOW WEEN - BYC5D-500 - HYPERFAST
40HF80
40HF80
Solid State Inc.
DO5 40 AMP SILICON RECTFIER KK
FESB16FT-E3/45
FESB16FT-E3/45
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 300V 16A TO263AB
JANTX1N5712-1
JANTX1N5712-1
Microchip Technology
DIODE SCHOTTKY 20V 750MA DO35
JANTX1N6642UBCC
JANTX1N6642UBCC
Microchip Technology
DIODE GEN PURP 75V 300MA UB
R7200612XXOO
R7200612XXOO
Powerex Inc.
DIODE GP 600V 1200A DO200AB
GPP60G-E3/73
GPP60G-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 6A P600
EGP10BE-E3/54
EGP10BE-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 1A DO204AL
SS34 R7G
SS34 R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 40V 3A DO214AB
ES1BLHMHG
ES1BLHMHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A SUB SMA
Вас также может заинтересовать
P6D12002E2
P6D12002E2
PN Junction Semiconductor
DIODE SCHOTTKY 1200V 2A TO252-2
P3D06010T2
P3D06010T2
PN Junction Semiconductor
DIODE SCHOTTKY 600V 10A TO220-2
P3D06010E2
P3D06010E2
PN Junction Semiconductor
DIODE SCHOTTKY 600V 10A TO252-2
P3D06016K3
P3D06016K3
PN Junction Semiconductor
DIODE SCHOTTKY 600V 16A TO247-3
P3D12010G2
P3D12010G2
PN Junction Semiconductor
DIODE SCHOTTKY 1200V 10A TO263-2
P3D12020K2
P3D12020K2
PN Junction Semiconductor
DIODE SCHOTTKY 1200V 50A TO247-2
P3M06300T3
P3M06300T3
PN Junction Semiconductor
SICFET N-CH 650V 9A TO-220-3
P3M12080K3
P3M12080K3
PN Junction Semiconductor
SICFET N-CH 1200V 47A TO-247-3
P1H06300D8
P1H06300D8
PN Junction Semiconductor
GANFET N-CH 650V 10A DFN 8X8
P3M171K0F3
P3M171K0F3
PN Junction Semiconductor
SICFET N-CH 1700V 5.5A TO-220F-3
P3M17040K3
P3M17040K3
PN Junction Semiconductor
SICFET N-CH 1700V 73A TO-247-3
P3M12017K4
P3M12017K4
PN Junction Semiconductor
SICFET N-CH 1200V 151A TO-247-4