P3M12017K4

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See Product Specifications

Mfr. #:

P3M12017K4

Mfr.:

PN Junction Semiconductor

Описание:

SICFET N-CH 1200V 151A TO-247-4

Упаковка:

Tube

Datasheet:

P3M12017K4 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	P3M12017K4
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	PN Junction Semiconductor
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	ed9a2411b032b5ad765b9d5f6b1bc8e1
Drain to Source Voltage (Vdss):	edca1d2343e4e5615ce51a879f622a76
Current - Continuous Drain (Id) @ 25°C:	d0b7b42389295474344083c325e70e8b
Drive Voltage (Max Rds On, Min Rds On):	c848c43fe07598760b6ae77bbaac9f40
Rds On (Max) @ Id, Vgs:	6c3f4d86df4431f84038416460d9818e
Vgs(th) (Max) @ Id:	c18daee7511e62dbfb72358ff2d4279c
Gate Charge (Qg) (Max) @ Vgs:	336d5ebc5436534e61d16e63ddfca327
Vgs (Max):	1d451f433f14e0cd99646c5802738209
Input Capacitance (Ciss) (Max) @ Vds:	336d5ebc5436534e61d16e63ddfca327
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	52dbdbcc99c5cfcc1e77c5c518a2d473
Operating Temperature:	57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	9c046995da32c872ed75715d3d64a881
Package / Case:	f1f05fa7d6a97ae451c8efbfb2831dfa