1N3265

1N3265

Images are for reference only
See Product Specifications

1N3265
Mfr.:
Описание:
DIODE GEN PURP 300V 160A DO205AB
Упаковка:
Bulk
Datasheet:
1N3265 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:1N3265
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Powerex Inc.
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):7990209dc00c5b5db65871c8bf669854
Current - Average Rectified (Io):a03a52001fde35eafa9486e1ca7d96cc
Voltage - Forward (Vf) (Max) @ If:336d5ebc5436534e61d16e63ddfca327
Speed:506dc4c3c6b37b60cdf6e54561f7a530
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Current - Reverse Leakage @ Vr:f8a3bc173335a5703100094349fba771
Capacitance @ Vr, F:336d5ebc5436534e61d16e63ddfca327
Mounting Type:aa594d7c7815385a1dd9ed9fbbb2d316
Package / Case:744a0efd174191aa4dc2a4b024db25dc
Supplier Device Package:37b618b97284a1a483c1f49980ea7fad
Operating Temperature - Junction:1a1a7862b3b5abe85ab6bb63480bbb5f
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
V2P6-M3/H
V2P6-M3/H
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60V 2A MICROSMP
VS-3EGU06WHM3/5BT
VS-3EGU06WHM3/5BT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 3A SMB
QRT812_T0_00001
QRT812_T0_00001
Panjit International Inc.
PLANAR STRUCTURED SUPERFAST RECO
VI20120SG-M3/4W
VI20120SG-M3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 20A 120V TO-262AA
FESB16BT-E3/81
FESB16BT-E3/81
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 16A TO263AB
VS-VSKE56/04
VS-VSKE56/04
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 60A ADDAPAK
SBR8060
SBR8060
Microchip Technology
RECTIFIER
1N2064
1N2064
Microchip Technology
STD RECTIFIER
R9G02412XX
R9G02412XX
Powerex Inc.
DIODE GP 2.4KV 1200A DO200AB
PR1007GL-T
PR1007GL-T
Diodes Incorporated
DIODE GEN PURP 1KV 1A DO41
RJU6054TDPP-EJ#T2
RJU6054TDPP-EJ#T2
Renesas Electronics America Inc
DIODE GEN PURP 600V 30A TO220FP
S1JL MHG
S1JL MHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A SUB SMA
Вас также может заинтересовать
BG1A-F
BG1A-F
Powerex Inc.
KIT DEV BOARD FOR IGBT
R5000415XXWA
R5000415XXWA
Powerex Inc.
RECTIFIER STUD MOUNT FORWARD DO-
R7010405XXUA
R7010405XXUA
Powerex Inc.
DIODE GEN PURP 400V 550A DO200AA
R7001403XXUA
R7001403XXUA
Powerex Inc.
DIODE GEN PURP 1.4KV 300A DO200
R7221608ASOO
R7221608ASOO
Powerex Inc.
DIODE GP 1.6KV 800A DO200AB
R9G03612XX
R9G03612XX
Powerex Inc.
DIODE GP 3.6KV 1200A DO200AA R62
PSS15SA2FT
PSS15SA2FT
Powerex Inc.
MOD IPM 6-PAC 15A 1200V DIP
T700043004BY
T700043004BY
Powerex Inc.
SCR 400V 470A TO209
T7270645B4DN
T7270645B4DN
Powerex Inc.
SCR 600V 700A T72
T727084554DN
T727084554DN
Powerex Inc.
SCR 800V 700A T72
CM200DU-24H
CM200DU-24H
Powerex Inc.
IGBT MOD 1200V 200A 1130W
BCIM-KIT
BCIM-KIT
Powerex Inc.
KIT DESIGN CTLR FOR IPM MODULES