RM12N650T2

RM12N650T2

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RM12N650T2
Mfr.:
Описание:
MOSFET N-CH 650V 11.5A TO220-3
Упаковка:
Tube
Datasheet:
RM12N650T2 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:RM12N650T2
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Rectron USA
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):347f255197950e6b02089b73b6a8acdd
Current - Continuous Drain (Id) @ 25°C:16d738cad9328e9406e9a364291f2416
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:a75da52fe2ced75fd4acf9ada88b37d0
Vgs(th) (Max) @ Id:9238c44d66e9d51854326c16b3397896
Gate Charge (Qg) (Max) @ Vgs:336d5ebc5436534e61d16e63ddfca327
Vgs (Max):972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:f822feea03ef198507dca92820b4ae4b
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):462242bcb3993554b834dfd3d1247da1
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:506558024381a3c368cb88e9e94f6845
Supplier Device Package:46bb638de2ea693de650d7f1c3115468
Package / Case:46bb638de2ea693de650d7f1c3115468
In Stock: 0
Stock:
0 Can Ship Immediately
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