RM27P30LDV

RM27P30LDV

Images are for reference only
See Product Specifications

RM27P30LDV
Mfr.:
Описание:
MOSFET P-CHANNEL 30V 27A TO252-2
Упаковка:
Tape & Reel (TR)
Datasheet:
RM27P30LDV Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:RM27P30LDV
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Rectron USA
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:9945a529f9f3f7e23d6cd49cab56133a
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:8327032e74f475ce06d188ccb65defa5
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:072cdca8b54a8d7092ca19fb90d2b493
Vgs(th) (Max) @ Id:bae68a70e94fb31c33c772f4fdf89b99
Gate Charge (Qg) (Max) @ Vgs:336d5ebc5436534e61d16e63ddfca327
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:bd55763af7748ff099549c98f6ceaa7b
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):2aa0e4b96ebad01dba346ba12d8321e6
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:9aff204699608b98648f08ba0034c0fb
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
FDMS7660AS
FDMS7660AS
onsemi
MOSFET N-CH 30V 26A/42A 8PQFN
UF4C120053K3S
UF4C120053K3S
UnitedSiC
1200V/53MOHM, SIC, FAST CASCODE,
PMH260UNEH
PMH260UNEH
Nexperia USA Inc.
MOSFET N-CH 20V 1.2A DFN0606-3
STD10NM60N
STD10NM60N
STMicroelectronics
MOSFET N-CH 600V 10A DPAK
PJQ4442P-AU_R2_000A1
PJQ4442P-AU_R2_000A1
Panjit International Inc.
40V N-CHANNEL ENHANCEMENT MODE M
BUZ73AE3046
BUZ73AE3046
Infineon Technologies
N-CHANNEL POWER MOSFET
PJF3NA80_T0_00001
PJF3NA80_T0_00001
Panjit International Inc.
800V N-CHANNEL MOSFET
TK8Q65W,S1Q
TK8Q65W,S1Q
Toshiba Semiconductor and Storage
MOSFET N-CH 650V 7.8A IPAK
IPI041N12N3G
IPI041N12N3G
Infineon Technologies
IPI041N12 - 12V-300V N-CHANNEL P
IXTA2N80
IXTA2N80
IXYS
MOSFET N-CH 800V 2A TO263
IRFR120NCPBF
IRFR120NCPBF
Infineon Technologies
MOSFET N-CH 100V 9.4A DPAK
DMP1200UFR4-7
DMP1200UFR4-7
Diodes Incorporated
MOSFET P-CH 12V 2A X2-DFN1010-3
Вас также может заинтересовать
1.5FMCJ43CA
1.5FMCJ43CA
Rectron USA
TVS DIODE 43VWM 59.3VC DO214AB
1.5FMCJ30CA
1.5FMCJ30CA
Rectron USA
TVS DIODE 30VWM 41.4VC DO214AB
3KPSMC60A
3KPSMC60A
Rectron USA
TVS DIODE 63.35VWM 97VC DO214AB
MSB205S
MSB205S
Rectron USA
BRIDGE RECT GLASS 600V 2A MSBS
4RS202M
4RS202M
Rectron USA
BRIDGE RECT 100V 4A RS-2M
RS1507MLS
RS1507MLS
Rectron USA
BRDGE RC GLASS 1000V 15A RS10MLS
R3000G
R3000G
Rectron USA
DIODE GEN PURP 3000V 500MA DO41
1SMAF4764A
1SMAF4764A
Rectron USA
DIODE ZENER 100V 1W SMAF
MMSZ4708T
MMSZ4708T
Rectron USA
DIODE ZENER 22V 300MW SOD-523
BZM55B11
BZM55B11
Rectron USA
ZENER 11V 500MW MICRO-MELF
1SMB5925B
1SMB5925B
Rectron USA
DIODE ZENER 10V 3W SMB
RM6N800TI
RM6N800TI
Rectron USA
MOSFET N-CHANNEL 800V 6A TO220F