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See Product Specifications
| номер части: | RM2N650IP |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Rectron USA |
| Упаковка: | Tube |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 347f255197950e6b02089b73b6a8acdd |
| Current - Continuous Drain (Id) @ 25°C: | a94e61109c54813522be818a0ece14f0 |
| Drive Voltage (Max Rds On, Min Rds On): | 76f7bec4411c6fbb49ed5d21d8974faf |
| Rds On (Max) @ Id, Vgs: | 9e5faff07c8030f851cafccbba1eb853 |
| Vgs(th) (Max) @ Id: | 54e5d6e67176a5b9df661d089760961f |
| Gate Charge (Qg) (Max) @ Vgs: | 336d5ebc5436534e61d16e63ddfca327 |
| Vgs (Max): | 972af1bbf385e6f2ec41d2be6228bd7e |
| Input Capacitance (Ciss) (Max) @ Vds: | 1b757cf73befe9833f5db3799aa16d8c |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | bfad39caa7b8b1823dc0b8308a2c0d14 |
| Operating Temperature: | 6a357bb51737d359c8bcaa66995aadb4 |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Supplier Device Package: | a3dced149a7bb887c7dd402aa353e8a7 |
| Package / Case: | f05f3b828db9b3466aca24456db9c84e |
