2SC3583-T1B-A

Images are for reference only
See Product Specifications

Mfr. #:

2SC3583-T1B-A

Mfr.:

Renesas Electronics America Inc

Описание:

2SC3583 - MD

Упаковка:

Bulk

Datasheet:

2SC3583-T1B-A Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	2SC3583-T1B-A
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - Bipolar (BJT) - RF
Производитель:	Renesas Electronics America Inc
Упаковка:	Bulk
Product Status:	ec30c235d0eb792797af1aa1d11759a7
Transistor Type:	e3d31b6d6c1368232482785f7e6d9bd1
Voltage - Collector Emitter Breakdown (Max):	76f7bec4411c6fbb49ed5d21d8974faf
Frequency - Transition:	24f448c86207b00eba1a71a6ce69f364
Noise Figure (dB Typ @ f):	851dd566823382d7adbda98a8f2ca85f
Gain:	168e83ce5dacad1d32eccb3604064bf1
Power - Max:	5b3273ce5fe742a768cbb4b75c900b70
DC Current Gain (hFE) (Min) @ Ic, Vce:	5a324fd28d338b5a31f0b6ef8afafd86
Current - Collector (Ic) (Max):	1341fd76a7b2cb21d1016c983c7a4fa9
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Package / Case:	51bf93173785f0f3fc2d8b70cf119689
Supplier Device Package:	1a1623714c6696f0926d216e3e00d4eb

In Stock: 125014

Stock:

125014 Can Ship Immediately