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See Product Specifications
| номер части: | 2SJ542-E |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Renesas Electronics America Inc |
| Упаковка: | Bulk |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 5568a11e95c42251b4839598cb5b4518 |
| Current - Continuous Drain (Id) @ 25°C: | 66ab69b459c614644a63dc0c3e22ff0d |
| Drive Voltage (Max Rds On, Min Rds On): | 336d5ebc5436534e61d16e63ddfca327 |
| Rds On (Max) @ Id, Vgs: | c453a5549b755d479e041dbe3bfeb9ab |
| Vgs(th) (Max) @ Id: | 25509f2d81b84ad0de9368a2b900ad19 |
| Gate Charge (Qg) (Max) @ Vgs: | 336d5ebc5436534e61d16e63ddfca327 |
| Vgs (Max): | ce6f0ee0e28319cd77230729fffeb8d1 |
| Input Capacitance (Ciss) (Max) @ Vds: | b1ba3f5e55b906329a7a494d9b97c3ab |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | 4d11c3d72a44f4227b1e9af62cf6d238 |
| Operating Temperature: | 9ba6558c95ad6e5d701d599c4dbbddd6 |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Supplier Device Package: | 9b3b590b14408ced9e56cc56696084a1 |
| Package / Case: | 46bb638de2ea693de650d7f1c3115468 |
