2SK1968-E

2SK1968-E

Images are for reference only
See Product Specifications

2SK1968-E
Описание:
N-CHANNEL POWER MOSFET
Упаковка:
Bulk
Datasheet:
2SK1968-E Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:2SK1968-E
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Renesas Electronics America Inc
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:336d5ebc5436534e61d16e63ddfca327
Technology:336d5ebc5436534e61d16e63ddfca327
Drain to Source Voltage (Vdss):336d5ebc5436534e61d16e63ddfca327
Current - Continuous Drain (Id) @ 25°C:336d5ebc5436534e61d16e63ddfca327
Drive Voltage (Max Rds On, Min Rds On):336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:336d5ebc5436534e61d16e63ddfca327
Vgs(th) (Max) @ Id:336d5ebc5436534e61d16e63ddfca327
Gate Charge (Qg) (Max) @ Vgs:336d5ebc5436534e61d16e63ddfca327
Vgs (Max):336d5ebc5436534e61d16e63ddfca327
Input Capacitance (Ciss) (Max) @ Vds:336d5ebc5436534e61d16e63ddfca327
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):336d5ebc5436534e61d16e63ddfca327
Operating Temperature:336d5ebc5436534e61d16e63ddfca327
Mounting Type:336d5ebc5436534e61d16e63ddfca327
Supplier Device Package:336d5ebc5436534e61d16e63ddfca327
Package / Case:336d5ebc5436534e61d16e63ddfca327
In Stock: 181
Stock:
181 Can Ship Immediately
  • Делиться:
Для использования с
EPC2012C
EPC2012C
EPC
GANFET N-CH 200V 5A DIE OUTLINE
SI7634BDP-T1-GE3
SI7634BDP-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 40A PPAK SO-8
PJD45N06A-AU_L2_000A1
PJD45N06A-AU_L2_000A1
Panjit International Inc.
60V N-CHANNEL ENHANCEMENT MODE M
IPW65R280E6
IPW65R280E6
Infineon Technologies
650 V COOLMOS E6 POWER MOSFET
NTMFS4D2N10MDT1G
NTMFS4D2N10MDT1G
onsemi
N-CHANNEL SHIELDED GATE POWERTRE
DMTH4005SPSQ-13
DMTH4005SPSQ-13
Diodes Incorporated
MOSFET N-CH 40V 20.9A PWRDI5060
IXTT360N055T2
IXTT360N055T2
IXYS
MOSFET N-CH 55V 360A TO268
IRF644NSTRL
IRF644NSTRL
Vishay Siliconix
MOSFET N-CH 250V 14A D2PAK
IPB048N06LGATMA1
IPB048N06LGATMA1
Infineon Technologies
MOSFET N-CH 60V 100A D2PAK
IXFR70N15
IXFR70N15
IXYS
MOSFET N-CH 150V 67A ISOPLUS247
V30410-T1-GE3
V30410-T1-GE3
Vishay Siliconix
MOSFET N-CH SMD
NVMFS5A160PLZWFT3G
NVMFS5A160PLZWFT3G
onsemi
MOSFET P-CH 60V 15A/100A 5DFN
Вас также может заинтересовать
XLH335033.000000X
XLH335033.000000X
Renesas Electronics America Inc
XTAL OSC XO 33.0000MHZ HCMOS SMD
TW6868-LB2-GR-EVAL
TW6868-LB2-GR-EVAL
Renesas Electronics America Inc
EVAL BOARD FOR TW6868-LB2-GR
F2483EVSA
F2483EVSA
Renesas Electronics America Inc
BOARD
2SA953-A
2SA953-A
Renesas Electronics America Inc
SMALL SIGNAL BIPOLAR TRANS PNP
2308-2HPGGI
2308-2HPGGI
Renesas Electronics America Inc
IC CLK MLTPLR ZDB 1:8 16TSSOP
ID82C54
ID82C54
Renesas Electronics America Inc
IC OSC PROG TIMER 8MHZ 24DIP
8N3DV85AC-0183CDI
8N3DV85AC-0183CDI
Renesas Electronics America Inc
IC OSC VCXO DUAL FREQ 6-CLCC
8N4DV85LC-0030CDI
8N4DV85LC-0030CDI
Renesas Electronics America Inc
IC OSC VCXO DUAL FREQ 6-CLCC
5962-9221804MRA
5962-9221804MRA
Renesas Electronics America Inc
IC FF D-TYPE SNGL 8BIT 20CDIP
4RCD0232KC1ATG8
4RCD0232KC1ATG8
Renesas Electronics America Inc
FCCSP 13.50X8.00X1.40 MM, 0.65MM
ISL61851CCBZ-T
ISL61851CCBZ-T
Renesas Electronics America Inc
IC HOT SWAP CTRLR USB 8SOIC
PS9817A-2-F3-AX
PS9817A-2-F3-AX
Renesas Electronics America Inc
OPTOISO 2.5KV 2CH OPEN COL 8SSOP