2SK2008-E

2SK2008-E

Images are for reference only
See Product Specifications

2SK2008-E
Описание:
N-CHANNEL POWER MOSFET
Упаковка:
Bulk
Datasheet:
2SK2008-E Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:2SK2008-E
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Renesas Electronics America Inc
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:336d5ebc5436534e61d16e63ddfca327
Technology:336d5ebc5436534e61d16e63ddfca327
Drain to Source Voltage (Vdss):336d5ebc5436534e61d16e63ddfca327
Current - Continuous Drain (Id) @ 25°C:336d5ebc5436534e61d16e63ddfca327
Drive Voltage (Max Rds On, Min Rds On):336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:336d5ebc5436534e61d16e63ddfca327
Vgs(th) (Max) @ Id:336d5ebc5436534e61d16e63ddfca327
Gate Charge (Qg) (Max) @ Vgs:336d5ebc5436534e61d16e63ddfca327
Vgs (Max):336d5ebc5436534e61d16e63ddfca327
Input Capacitance (Ciss) (Max) @ Vds:336d5ebc5436534e61d16e63ddfca327
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):336d5ebc5436534e61d16e63ddfca327
Operating Temperature:336d5ebc5436534e61d16e63ddfca327
Mounting Type:336d5ebc5436534e61d16e63ddfca327
Supplier Device Package:336d5ebc5436534e61d16e63ddfca327
Package / Case:336d5ebc5436534e61d16e63ddfca327
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
RJK0701DPP-E0#T2
RJK0701DPP-E0#T2
Renesas Electronics America Inc
MOSFET N-CH 75V 100A TO220FP
IXFP34N65X3
IXFP34N65X3
IXYS
MOSFET 34A 650V X3 TO220
G20N03D2
G20N03D2
Goford Semiconductor
N30V,RD(MAX)<24M@10V,RD(MAX)<29M
SI3460DDV-T1-GE3
SI3460DDV-T1-GE3
Vishay Siliconix
MOSFET N-CH 20V 7.9A 6TSOP
CSD23202W10
CSD23202W10
Texas Instruments
MOSFET P-CH 12V 2.2A 4DSBGA
SPD08P06PGBTMA1
SPD08P06PGBTMA1
Infineon Technologies
MOSFET P-CH 60V 8.83A TO252-3
IPTG025N10NM5ATMA1
IPTG025N10NM5ATMA1
Infineon Technologies
TRENCH >=100V PG-HSOG-8
IXFR9N80Q
IXFR9N80Q
IXYS
MOSFET N-CH 800V ISOPLUS247
NTMFS4108NT1G
NTMFS4108NT1G
onsemi
MOSFET N-CH 30V 13.5A 5DFN
AOI1N60L
AOI1N60L
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 600V 1.3A TO251A
IXFM1633
IXFM1633
IXYS
POWER MOSFET TO-3
SCT2280KEGC11
SCT2280KEGC11
Rohm Semiconductor
1200V, 14A, THD, SILICON-CARBIDE
Вас также может заинтересовать
XUH730049.700000X
XUH730049.700000X
Renesas Electronics America Inc
CLCC 7.00X5.00X1.30 MM, 2.54MM P
XLM525200.000000I
XLM525200.000000I
Renesas Electronics America Inc
XTAL OSC XO 200.0000MHZ LVDS SMD
XLP73V240.000000I
XLP73V240.000000I
Renesas Electronics America Inc
XTAL OSC VCXO 240.0000MHZ LVPECL
HZ9C1LTA-E
HZ9C1LTA-E
Renesas Electronics America Inc
DIODE ZENER
74FCT3807ASOGI8
74FCT3807ASOGI8
Renesas Electronics America Inc
IC CLK BUFFER 1:10 100MHZ 20SOIC
8N3DV85AC-0079CDI8
8N3DV85AC-0079CDI8
Renesas Electronics America Inc
IC OSC VCXO DUAL FREQ 6-CLCC
8N4SV76BC-0013CDI8
8N4SV76BC-0013CDI8
Renesas Electronics America Inc
IC OSC VCXO 622.08MHZ 6-CLCC
8N4SV76BC-0046CDI
8N4SV76BC-0046CDI
Renesas Electronics America Inc
IC OSC VCXO 200MHZ 6-CLCC
8N4Q001KG-0106CDI
8N4Q001KG-0106CDI
Renesas Electronics America Inc
IC OSC CLOCK QD FREQ 10CLCC
8N4QV01KG-1120CDI
8N4QV01KG-1120CDI
Renesas Electronics America Inc
IC OSC VCXO QD FREQ 10CLCC
R5F100LGGFA#10
R5F100LGGFA#10
Renesas Electronics America Inc
IC MCU 16BIT 128KB FLASH 64LQFP
70T631S10BF8
70T631S10BF8
Renesas Electronics America Inc
IC SRAM 4.5MBIT PAR 208CABGA