2SK2221-E

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See Product Specifications

Mfr. #:

2SK2221-E

Mfr.:

Renesas Electronics America Inc

Описание:

MOSFET N-CH 200V 8A TO3P

Упаковка:

Tray

Datasheet:

2SK2221-E Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	2SK2221-E
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Renesas Electronics America Inc
Упаковка:	Tray
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	b86aa01bc1f9484a191794819edcfc06
Current - Continuous Drain (Id) @ 25°C:	3f9b80b2313763e17eb9d4414601dfee
Drive Voltage (Max Rds On, Min Rds On):	336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:	336d5ebc5436534e61d16e63ddfca327
Vgs(th) (Max) @ Id:	336d5ebc5436534e61d16e63ddfca327
Gate Charge (Qg) (Max) @ Vgs:	336d5ebc5436534e61d16e63ddfca327
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	2ac289ba9c21e812600d442d24538fc4
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	b1b9c7ff3bcb5642e62edfb8c3bca1bc
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	dc62bb2234bdbf5b418010bea6cac21b
Package / Case:	a02e0d1a928de3366340ceae094aecd8