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See Product Specifications
| номер части: | FA4F4M-T1B-A |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Производитель: | Renesas Electronics America Inc |
| Упаковка: | Box |
| Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
| Transistor Type: | 2118df2aa458b1e26181f0df8cbeda82 |
| Current - Collector (Ic) (Max): | 63f9c0b014d9e8860c3239712547a74a |
| Voltage - Collector Emitter Breakdown (Max): | 1c53213259cb70ca6e36d7a9c97e7231 |
| Resistor - Base (R1): | 93ef257b85b63b989f59f83b6b542be2 |
| Resistor - Emitter Base (R2): | 93ef257b85b63b989f59f83b6b542be2 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 8e0a69e11816b461d3450f5929edb8d8 |
| Vce Saturation (Max) @ Ib, Ic: | a81788b1fba4ec0c8200942d391e52d5 |
| Current - Collector Cutoff (Max): | deeb8c7cafdc46f12ef41020ec559854 |
| Frequency - Transition: | 336d5ebc5436534e61d16e63ddfca327 |
| Power - Max: | ffd0459b4ef502205ee3430ebd978649 |
| Mounting Type: | 336d5ebc5436534e61d16e63ddfca327 |
| Package / Case: | 336d5ebc5436534e61d16e63ddfca327 |
| Supplier Device Package: | 336d5ebc5436534e61d16e63ddfca327 |
