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See Product Specifications
| номер части: | H7N1002LSTL-E |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Renesas Electronics America Inc |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 227b5c7c7a2ed2ea3da210ed0860030d |
| Current - Continuous Drain (Id) @ 25°C: | 5922eef45f1b12e72fd2a743a628778e |
| Drive Voltage (Max Rds On, Min Rds On): | 214881f189d1d05281deda79f8c1bf77 |
| Rds On (Max) @ Id, Vgs: | 0b536cd34593157885b5fa3157b30317 |
| Vgs(th) (Max) @ Id: | 336d5ebc5436534e61d16e63ddfca327 |
| Gate Charge (Qg) (Max) @ Vgs: | 5be34c12f583502c1ec5029d1c0814a3 |
| Vgs (Max): | ce6f0ee0e28319cd77230729fffeb8d1 |
| Input Capacitance (Ciss) (Max) @ Vds: | 59f6ad302a15d4c169f5d44f5230e097 |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | b1b9c7ff3bcb5642e62edfb8c3bca1bc |
| Operating Temperature: | a05f788eae82918882d3b91ce435570b |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Supplier Device Package: | 6260991c34710c5aa8fc14fd93c922f7 |
| Package / Case: | 75e2ba04b81e44768adf536f9d0a3803 |
