HAT2165N-EL-E

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See Product Specifications

Mfr. #:

HAT2165N-EL-E

Mfr.:

Renesas Electronics America Inc

Описание:

MOSFET N-CH 30V 55A 8LFPAK

Упаковка:

Bulk

Datasheet:

HAT2165N-EL-E Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	HAT2165N-EL-E
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Renesas Electronics America Inc
Упаковка:	Bulk
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:	d1488f76ebdc9346fe27e1e32f2e752b
Drive Voltage (Max Rds On, Min Rds On):	336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:	b5a55db7b5e67d080fb2536a814c5671
Vgs(th) (Max) @ Id:	336d5ebc5436534e61d16e63ddfca327
Gate Charge (Qg) (Max) @ Vgs:	cc28f85a0e0ec1d73330849b99a34208
Vgs (Max):	336d5ebc5436534e61d16e63ddfca327
Input Capacitance (Ciss) (Max) @ Vds:	f3a30f4b91590d30dcfd6bdcc53cf9bf
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	6395095cf5d045979816b63506fbde01
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	99848de5e46f6ef43b3e679ff559eede
Package / Case:	807a12c20c9808f2e766a245531a8f5e