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See Product Specifications
| номер части: | HSG1002VE-TL-E |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - RF |
| Производитель: | Renesas Electronics America Inc |
| Упаковка: | Bulk |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | e3d31b6d6c1368232482785f7e6d9bd1 |
| Voltage - Collector Emitter Breakdown (Max): | 9b0d56c9236c5db5fbef63663a27f756 |
| Frequency - Transition: | 5b6235cc8775b9e4b9e6c9e7f143937c |
| Noise Figure (dB Typ @ f): | 093fb83ffcece7b0d26e70953c8835f4 |
| Gain: | 8c978290046ca9829ba9d416503723b5 |
| Power - Max: | 5b3273ce5fe742a768cbb4b75c900b70 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | cb9ccfc8dab811c5a76d0fe374b9159d |
| Current - Collector (Ic) (Max): | 63fc4c7aa1c5a40077fccc0c1e9c768c |
| Operating Temperature: | 336d5ebc5436534e61d16e63ddfca327 |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Package / Case: | 101477a309da38dc2fcceed5a2d2cb07 |
| Supplier Device Package: | 39bc09ddf7985655955e917eab940484 |
