HSG1002VE-TL-E

Images are for reference only
See Product Specifications

Mfr. #:

HSG1002VE-TL-E

Mfr.:

Renesas Electronics America Inc

Описание:

RF 0.035A C BAND GERMANIUM NPN

Упаковка:

Bulk

Datasheet:

HSG1002VE-TL-E Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	HSG1002VE-TL-E
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - Bipolar (BJT) - RF
Производитель:	Renesas Electronics America Inc
Упаковка:	Bulk
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
Transistor Type:	e3d31b6d6c1368232482785f7e6d9bd1
Voltage - Collector Emitter Breakdown (Max):	9b0d56c9236c5db5fbef63663a27f756
Frequency - Transition:	5b6235cc8775b9e4b9e6c9e7f143937c
Noise Figure (dB Typ @ f):	093fb83ffcece7b0d26e70953c8835f4
Gain:	8c978290046ca9829ba9d416503723b5
Power - Max:	5b3273ce5fe742a768cbb4b75c900b70
DC Current Gain (hFE) (Min) @ Ic, Vce:	cb9ccfc8dab811c5a76d0fe374b9159d
Current - Collector (Ic) (Max):	63fc4c7aa1c5a40077fccc0c1e9c768c
Operating Temperature:	336d5ebc5436534e61d16e63ddfca327
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Package / Case:	101477a309da38dc2fcceed5a2d2cb07
Supplier Device Package:	39bc09ddf7985655955e917eab940484

In Stock: 519687

Stock:

519687 Can Ship Immediately