HVC131TRF-E

HVC131TRF-E

Images are for reference only
See Product Specifications

HVC131TRF-E
Описание:
PIN DIODE, 60V
Упаковка:
Bulk
Datasheet:
HVC131TRF-E Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:HVC131TRF-E
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Renesas Electronics America Inc
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:336d5ebc5436534e61d16e63ddfca327
Voltage - DC Reverse (Vr) (Max):336d5ebc5436534e61d16e63ddfca327
Current - Average Rectified (Io):336d5ebc5436534e61d16e63ddfca327
Voltage - Forward (Vf) (Max) @ If:336d5ebc5436534e61d16e63ddfca327
Speed:336d5ebc5436534e61d16e63ddfca327
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Current - Reverse Leakage @ Vr:336d5ebc5436534e61d16e63ddfca327
Capacitance @ Vr, F:336d5ebc5436534e61d16e63ddfca327
Mounting Type:336d5ebc5436534e61d16e63ddfca327
Package / Case:336d5ebc5436534e61d16e63ddfca327
Supplier Device Package:336d5ebc5436534e61d16e63ddfca327
Operating Temperature - Junction:336d5ebc5436534e61d16e63ddfca327
In Stock: 244299
Stock:
244299 Can Ship Immediately
  • Делиться:
Для использования с
S4D10120H
S4D10120H
SMC Diode Solutions
DIODE SCHOTTKY SILICON CARBIDE S
1N4448WT
1N4448WT
onsemi
DIODE GEN PURP 75V 200MA SOD523F
US5BC-HF
US5BC-HF
Comchip Technology
RECTIFIER ULTRA FAST RECOVERY 10
RS3G-E3/9AT
RS3G-E3/9AT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 3A DO214AB
1N3779
1N3779
Microchip Technology
STANDARD RECTIFIER
NS8BTHE3/45
NS8BTHE3/45
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 8A TO220AC
IDB23E60ATMA1
IDB23E60ATMA1
Infineon Technologies
DIODE GP 600V 41A TO263-3-2
RGP02-14E-M3/54
RGP02-14E-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GP 1.4KV 500MA DO204AL
FERD20U60DJF-TR
FERD20U60DJF-TR
STMicroelectronics
DIODE RECT 60V 20A POWERFLAT
IDK10G65C5XTMA1
IDK10G65C5XTMA1
Infineon Technologies
DIODE SCHOTTKY 650V 10A TO263-2
ES1FL M2G
ES1FL M2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 1A SUB SMA
1N5392G B0G
1N5392G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1.5A DO204AC
Вас также может заинтересовать
XLP736155.250000I
XLP736155.250000I
Renesas Electronics America Inc
XTAL OSC XO 155.2500MHZ LVPECL
FXTC-HE73PR-19.2 MHZ
FXTC-HE73PR-19.2 MHZ
Renesas Electronics America Inc
XTAL OSC TCXO 19.2000MHZ HCMOS
621MLF
621MLF
Renesas Electronics America Inc
IC CLK BUFFER 1:4 200MHZ 8SOIC
6V49300-01NLGI8
6V49300-01NLGI8
Renesas Electronics America Inc
IC
8N3DV85KC-0098CDI8
8N3DV85KC-0098CDI8
Renesas Electronics America Inc
IC OSC VCXO DUAL FREQ 6-CLCC
8N4SV76FC-0011CDI
8N4SV76FC-0011CDI
Renesas Electronics America Inc
IC OSC VCXO 622.08MHZ 6-CLCC
8N3Q001LG-0069CDI
8N3Q001LG-0069CDI
Renesas Electronics America Inc
IC OSC CLOCK QD FREQ 10CLCC
8N3QV01EG-0171CDI8
8N3QV01EG-0171CDI8
Renesas Electronics America Inc
IC OSC VCXO QD FREQ 10CLCC
X9221AWSZ
X9221AWSZ
Renesas Electronics America Inc
IC DGTL POT 10KOHM 64TAP 20SOIC
ISL84517IHZ-T
ISL84517IHZ-T
Renesas Electronics America Inc
IC SWITCH SPST SOT23-5
7006S15J
7006S15J
Renesas Electronics America Inc
IC SRAM 128KBIT PARALLEL 68PLCC
70V28L15PFI8
70V28L15PFI8
Renesas Electronics America Inc
IC SRAM 1MBIT PARALLEL 100TQFP