N0602N-S19-AY

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Mfr. #:

N0602N-S19-AY

Mfr.:

Renesas Electronics America Inc

Описание:

MOSFET N-CH 60V 100A TO220-3

Упаковка:

Tube

Datasheet:

N0602N-S19-AY Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	N0602N-S19-AY
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Renesas Electronics America Inc
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:	626760822211ebd4c2dcfd72769f5d49
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	d3e8a6645205a9e374618d7e005325ef
Vgs(th) (Max) @ Id:	336d5ebc5436534e61d16e63ddfca327
Gate Charge (Qg) (Max) @ Vgs:	ae2db4038597e3bd8d6ac32b79f2b23a
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	327ff8219cf95b4d7b991a024b81bd98
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	3bad0f0a75b3d086e088b8b6444e68eb
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	46bb638de2ea693de650d7f1c3115468
Package / Case:	4d3cb5addce98341b0338d22f390572e