NE85633-T1B-R25-A

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See Product Specifications

Mfr. #:

NE85633-T1B-R25-A

Mfr.:

Renesas

Описание:

SAME AS 2SC3356 NPN SILICON AMPL

Упаковка:

Tape & Reel (TR)

Datasheet:

NE85633-T1B-R25-A Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	NE85633-T1B-R25-A
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - Bipolar (BJT) - RF
Производитель:	Renesas
Упаковка:	Tape & Reel (TR)
Product Status:	81a04506d9ec7639ad93ec4fd63454ba
Transistor Type:	e3d31b6d6c1368232482785f7e6d9bd1
Voltage - Collector Emitter Breakdown (Max):	ffb6e22cfcfa6ff4ab883374e06309ac
Frequency - Transition:	48f743ef4061bd515d9f0b04593ea344
Noise Figure (dB Typ @ f):	5f0c0d30e3b2bd78a86cac711e2258cd
Gain:	7f7833c90e7bcef057103f9d144f8122
Power - Max:	5b3273ce5fe742a768cbb4b75c900b70
DC Current Gain (hFE) (Min) @ Ic, Vce:	b9aacc65f155646c2327df686ea23012
Current - Collector (Ic) (Max):	8fa6a3a617ed852de22fab67a97483fa
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Package / Case:	51bf93173785f0f3fc2d8b70cf119689
Supplier Device Package:	ea750bff97f7f546f13e8fe135d4459b

In Stock: 18000

Stock:

18000 Can Ship Immediately