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See Product Specifications
| номер части: | NESG2101M05-T1-A |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - RF |
| Производитель: | Renesas Electronics America Inc |
| Упаковка: | Bulk |
| Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
| Transistor Type: | e3d31b6d6c1368232482785f7e6d9bd1 |
| Voltage - Collector Emitter Breakdown (Max): | ca780190014b60ca18e65ea3a5bdf39b |
| Frequency - Transition: | 06b4aea504c921d57e29b61e42a96df7 |
| Noise Figure (dB Typ @ f): | 31a4f0a5938178732a3df892073013bd |
| Gain: | b96dc6eb19f1e1b9489082987cef4d1f |
| Power - Max: | 7a8c59f1ca1e353fce53b5236a58081c |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 47382b399ed0d1764339cb98c34086bb |
| Current - Collector (Ic) (Max): | 8fa6a3a617ed852de22fab67a97483fa |
| Operating Temperature: | 336d5ebc5436534e61d16e63ddfca327 |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Package / Case: | de34e348555ad8f17019c361ea6ccd17 |
| Supplier Device Package: | 934ad613d284c3e01856c054185f9913 |
