NNCD11F-T1B-AT

NNCD11F-T1B-AT

Images are for reference only
See Product Specifications

NNCD11F-T1B-AT
Mfr.:
Описание:
NNCD11F-T1B-AT - ELECTROSTATIC D
Упаковка:
Bulk
Datasheet:
NNCD11F-T1B-AT Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:NNCD11F-T1B-AT
Категория:Circuit Protection
Подкатегория:TVS - Diodes
Производитель:Renesas
Упаковка:Bulk
Product Status:ec30c235d0eb792797af1aa1d11759a7
Type:96d9445f264df80066fd6309ac4f27c0
Unidirectional Channels:c81e728d9d4c2f636f067f89cc14862c
Bidirectional Channels:336d5ebc5436534e61d16e63ddfca327
Voltage - Reverse Standoff (Typ):327e0d2fa9587088f2a5593ab53ac881
Voltage - Breakdown (Min):9db3a51cfe7c3c53765f72d8005cc95e
Voltage - Clamping (Max) @ Ipp:336d5ebc5436534e61d16e63ddfca327
Current - Peak Pulse (10/1000µs):336d5ebc5436534e61d16e63ddfca327
Power - Peak Pulse:a8b2ae53f0852e5ab6a77847a06d6359
Power Line Protection:bafd7322c6e97d25b6299b5d6fe8920b
Applications:94a1a3953054d8ece597f4f69bb343d4
Capacitance @ Frequency:756b11a22bf625723e742a4ef7ae7b2e
Operating Temperature:a05f788eae82918882d3b91ce435570b
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:51bf93173785f0f3fc2d8b70cf119689
Supplier Device Package:d2bf94372df83e5aa092ca0328a62688
In Stock: 12000
Stock:
12000 Can Ship Immediately
  • Делиться:
Для использования с
SMBJ120CD-M3/I
SMBJ120CD-M3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 120VWM 190VC DO214AA
P1CH7.0A-AU_R1_000A1
P1CH7.0A-AU_R1_000A1
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
SMBJ48CA-E3/5B
SMBJ48CA-E3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 48VWM 77.4VC DO214AA
P6KE22CA_R2_00001
P6KE22CA_R2_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION TRANSI
SMBJ10A-M3/5B
SMBJ10A-M3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 10VWM 17VC DO214AA
SMBJ12AHM3_A/H
SMBJ12AHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 12VWM 19.9VC DO214AA
SMDA24C-4/TR13
SMDA24C-4/TR13
Microchip Technology
TVS DIODE 24VWM 55VC 8-SO
DM8W10A-13
DM8W10A-13
Diodes Incorporated
TVS DIODE 10VWM 17VC DO218
MXLSMBJSAC8.0E3
MXLSMBJSAC8.0E3
Microchip Technology
TVS DIODE 8VWM 13.4VC SMBJ
SA60HE3/54
SA60HE3/54
Vishay General Semiconductor - Diodes Division
TVS DIODE 60VWM 107VC DO204AC
MAP5KE8.5CA
MAP5KE8.5CA
Microsemi Corporation
TVS DIODE 8.5VWM 14.4VC DO204AL
1.5KE7.5C-B
1.5KE7.5C-B
Littelfuse Inc.
TVS DIODE 6.4VWM 11.87VC DO201
Вас также может заинтересовать
NNCD5.1D-T1-A
NNCD5.1D-T1-A
Renesas
NNCD5.1D-T1-A - ELECTROSTATIC DI
RD8.2S(0)-T1-AT
RD8.2S(0)-T1-AT
Renesas
RD8.2S(0)-T1-AT - ZENER DIODES20
RD6.8M-T2B-A
RD6.8M-T2B-A
Renesas
RD6.8M-T2B-A - ZENER DIODES 200
RD13M-T2B-A
RD13M-T2B-A
Renesas
RD13M-T2B-A - ZENER DIODES 200 M
RD33FM(D1)-T1-AZ
RD33FM(D1)-T1-AZ
Renesas
RD33FM - 1W ZENER DIODE
HZM6.8NB2TL-E
HZM6.8NB2TL-E
Renesas
HZM6.8N - ZENER DIODE
RD22P-T1-AZ
RD22P-T1-AZ
Renesas
RD22P-T1-AZ - 1W POWER MINI MOLD
RD4.7P-T1-AZ
RD4.7P-T1-AZ
Renesas
RD4.7P-T1-AZ - 1W POWER MINI MOL
RJL5013DPP-E0#T2
RJL5013DPP-E0#T2
Renesas
RJL5013DPP - N CHANNEL MOSFET
PS9552L3-E3-AX
PS9552L3-E3-AX
Renesas
PS9552 - HIGH CMR IGBT GATE DRIV
PS9552L2-E3-AX
PS9552L2-E3-AX
Renesas
PS9552 - HIGH CMR IGBT GATE DRIV
PS9552-AX
PS9552-AX
Renesas
PS9552 - HIGH CMR IGBT GATE DRIV