NP109N055PUJ-E1B-AY

NP109N055PUJ-E1B-AY

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NP109N055PUJ-E1B-AY
Описание:
MOSFET N-CH 55V 110A TO263
Упаковка:
Tape & Reel (TR)
Datasheet:
NP109N055PUJ-E1B-AY Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:NP109N055PUJ-E1B-AY
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Renesas Electronics America Inc
Упаковка:Tape & Reel (TR)
Product Status:ec30c235d0eb792797af1aa1d11759a7
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):2f23d6284d881f9576110d827b42bb45
Current - Continuous Drain (Id) @ 25°C:57a34c9ff9b53d9d48ffa09d43154c82
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:df79600f1e7b97b6457dfcd806f19557
Vgs(th) (Max) @ Id:9238c44d66e9d51854326c16b3397896
Gate Charge (Qg) (Max) @ Vgs:c881057a7d4b8aa9690ff4ad6401d55b
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:9d902350fd312be05155aa508a917ff0
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):acb2a409529ce31025389528f85e8965
Operating Temperature:dfb4ad46e1ac805451b8f397e97630b4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:9e22a2b9016f93d429537021d03d41c1
Package / Case:99446f4470b43888d0c78d7d2cdfc956
In Stock: 0
Stock:
0 Can Ship Immediately
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