RJH1DF7RDPQ-80#T2

RJH1DF7RDPQ-80#T2

Images are for reference only
See Product Specifications

RJH1DF7RDPQ-80#T2
Mfr.:
Описание:
RJH1DF7 - INSULATED GATE BIPOLAR
Упаковка:
Bulk
Datasheet:
RJH1DF7RDPQ-80#T2 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:RJH1DF7RDPQ-80#T2
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - IGBTs - Single
Производитель:Renesas
Упаковка:Bulk
Product Status:ec30c235d0eb792797af1aa1d11759a7
IGBT Type:336d5ebc5436534e61d16e63ddfca327
Voltage - Collector Emitter Breakdown (Max):7bea4b6d3fd0ae73d2f5ecabf98ee369
Current - Collector (Ic) (Max):4c7be7db0ed1160a2dfac6e29929b43d
Current - Collector Pulsed (Icm):336d5ebc5436534e61d16e63ddfca327
Vce(on) (Max) @ Vge, Ic:0c2791d3c500b8992dd56dc2669b720e
Power - Max:919b6817f7a1d97dc672009d630453af
Switching Energy:336d5ebc5436534e61d16e63ddfca327
Input Type:eb6d8ae6f20283755b339c0dc273988b
Gate Charge:336d5ebc5436534e61d16e63ddfca327
Td (on/off) @ 25°C:1fd533337d79907716ca82c3c15cf049
Test Condition:f853322cf9958afbdd9193b64fb996da
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Operating Temperature:a05f788eae82918882d3b91ce435570b
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:748a8539a6c3c7dbdb455218c72fac40
Supplier Device Package:566bc0f44c33782e0104763798b071ab
In Stock: 400
Stock:
400 Can Ship Immediately
  • Делиться:
Для использования с
IXBT2N250
IXBT2N250
IXYS
IGBT 2500V 5A 32W TO268
IKW75N65EH5XKSA1
IKW75N65EH5XKSA1
Infineon Technologies
IGBT TRENCH 650V 90A TO247-3
IXBF9N160G
IXBF9N160G
IXYS
IGBT 1600V 7A 70W I4PAC
FGH40N60UFDTU
FGH40N60UFDTU
onsemi
IGBT FIELD STOP 600V 80A TO247-3
IKW20N65ET7XKSA1
IKW20N65ET7XKSA1
Infineon Technologies
IKW20N65ET7XKSA1
IXYA20N120C3HV-TRL
IXYA20N120C3HV-TRL
IXYS
IXYA20N120C3HV TRL
IRG4PH20KD
IRG4PH20KD
Infineon Technologies
IGBT 1200V 11A 60W TO247AC
FGP30N6S2
FGP30N6S2
onsemi
IGBT 600V 45A 167W TO220AB
IXGH30N60C2D4
IXGH30N60C2D4
IXYS
IGBT 600V 60A TO247AD
IRGR2B60KDPBF
IRGR2B60KDPBF
Infineon Technologies
IGBT 600V 6.3A 35W DPAK
RJH65D27BDPQ-A0#T0
RJH65D27BDPQ-A0#T0
Renesas Electronics America Inc
IGBT 650V
NGTD30T120F2WP
NGTD30T120F2WP
onsemi
IGBT TRENCH FIELD STOP 1200V DIE
Вас также может заинтересовать
RD24M-T2B-A
RD24M-T2B-A
Renesas
RD24M-T2B-A - ZENER DIODES 200 M
RD2.0UM(0)-T1-A
RD2.0UM(0)-T1-A
Renesas
RD2.0UM(0)-T1-A - ZENER DIODES 2
RD4.7S(0)-T2-A
RD4.7S(0)-T2-A
Renesas
RD4.7S(0)-T2-A - ZENER DIODES200
RD13FM-T1-AY
RD13FM-T1-AY
Renesas
RD13FM-T1-AY - ZENER DIODES1 W P
HZU5.6B2JTRF-E
HZU5.6B2JTRF-E
Renesas
HZU5.6B - ZENER DIODE, 5.61V, 2.
HZU27B-JTRF-E
HZU27B-JTRF-E
Renesas
HZU27B - ZENER DIODE, 27V, 7.04%
HZM11NB1TR-E
HZM11NB1TR-E
Renesas
HZM11N - ZENER DIODE
RD18P-T1-AY
RD18P-T1-AY
Renesas
RD18P-T1-AY - 1W POWER MINI MOLD
BCR16CM-12LA#B00
BCR16CM-12LA#B00
Renesas
BCR16CM-12LA - MEDIUM POWER TRIA
UPA1601GS-E1-A
UPA1601GS-E1-A
Renesas
UPA1601 - MONOLITHIC POWER MOSFE
HA17904FPK-EL-E
HA17904FPK-EL-E
Renesas
HA17904 - OPERATIONAL AMPLIFIER,
PS9552L2-E3-AX
PS9552L2-E3-AX
Renesas
PS9552 - HIGH CMR IGBT GATE DRIV