RJH1DF7RDPQ-80#T2

RJH1DF7RDPQ-80#T2

Images are for reference only
See Product Specifications

RJH1DF7RDPQ-80#T2
Mfr.:
Описание:
RJH1DF7 - INSULATED GATE BIPOLAR
Упаковка:
Bulk
Datasheet:
RJH1DF7RDPQ-80#T2 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:RJH1DF7RDPQ-80#T2
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - IGBTs - Single
Производитель:Renesas
Упаковка:Bulk
Product Status:ec30c235d0eb792797af1aa1d11759a7
IGBT Type:336d5ebc5436534e61d16e63ddfca327
Voltage - Collector Emitter Breakdown (Max):7bea4b6d3fd0ae73d2f5ecabf98ee369
Current - Collector (Ic) (Max):4c7be7db0ed1160a2dfac6e29929b43d
Current - Collector Pulsed (Icm):336d5ebc5436534e61d16e63ddfca327
Vce(on) (Max) @ Vge, Ic:0c2791d3c500b8992dd56dc2669b720e
Power - Max:919b6817f7a1d97dc672009d630453af
Switching Energy:336d5ebc5436534e61d16e63ddfca327
Input Type:eb6d8ae6f20283755b339c0dc273988b
Gate Charge:336d5ebc5436534e61d16e63ddfca327
Td (on/off) @ 25°C:1fd533337d79907716ca82c3c15cf049
Test Condition:f853322cf9958afbdd9193b64fb996da
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Operating Temperature:a05f788eae82918882d3b91ce435570b
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:748a8539a6c3c7dbdb455218c72fac40
Supplier Device Package:566bc0f44c33782e0104763798b071ab
In Stock: 400
Stock:
400 Can Ship Immediately
  • Делиться:
Для использования с
APT25GR120BD15
APT25GR120BD15
Microchip Technology
IGBT 1200V 75A 521W TO247
AOK15B60D
AOK15B60D
Alpha & Omega Semiconductor Inc.
IGBT 600V 30A 167W TO247
APT50GF120B2RG
APT50GF120B2RG
Microchip Technology
IGBT 1200V 135A 781W TMAX
IXG65I3300KN
IXG65I3300KN
IXYS
DISC IGBT NPT-VERY HI VOLTAGE IS
IKW20N60H3
IKW20N60H3
Infineon Technologies
IKW20N60 - DISCRETE IGBT WITH AN
STGB20NB32LZ
STGB20NB32LZ
STMicroelectronics
IGBT 375V 40A 150W I2PAK
IXGH20N120BD1
IXGH20N120BD1
IXYS
IGBT 1200V 40A 190W TO247
TIG110BF
TIG110BF
onsemi
IGBT 600V 27A 2W TO220
IRGS4062DTRLPBF
IRGS4062DTRLPBF
Infineon Technologies
IGBT DISCRETES
IEWS20R5135IPBXKLA1
IEWS20R5135IPBXKLA1
Infineon Technologies
HOME APPLIANCES 14
GT50N322A
GT50N322A
Toshiba Semiconductor and Storage
PB-F IGBT / TRANSISTOR TO-3PN IC
BIDW30N60T
BIDW30N60T
Bourns Inc.
IGBT 600V 30A TRENCH TO-247
Вас также может заинтересовать
RD10S(0)-T1-A
RD10S(0)-T1-A
Renesas
RD10S(0)-T1-A - ZENER DIODES200
RD18S(0)-T1-A
RD18S(0)-T1-A
Renesas
RD18S - 200MW ZENER DIODE
RD5.6SL(0)-T1-A
RD5.6SL(0)-T1-A
Renesas
RD5.6SL(0)-T1-A - ZENER DIODES 2
NNCD3.3F-T1B-A
NNCD3.3F-T1B-A
Renesas
NNCD3.3F-T1B-A - ELECTROSTATIC D
RD2.0FM(0)-T1-AY
RD2.0FM(0)-T1-AY
Renesas
RD2.0FM(0)-T1-AY - ZENER DIODES1
HZU8.2B2TRF-E-Q
HZU8.2B2TRF-E-Q
Renesas
HZU8.2B - ZENER DIODE, 8.19V, 2.
NE68030-T1-A
NE68030-T1-A
Renesas
SAME AS 2SC4228 NPN SILICON AMPL
UPA1911ATE(0)-T1-A
UPA1911ATE(0)-T1-A
Renesas
UPA1911A - FIELD-EFFECT TRANSIST
NP160N055TUJ-E1-AY
NP160N055TUJ-E1-AY
Renesas
NP160N055TUJ-E1-AY - SWITCHINGN-
R5F6417MADFD#UA
R5F6417MADFD#UA
Renesas
MICROCONTROLLER, 16-BIT, FLASH,
RD75P-T2-AZ
RD75P-T2-AZ
Renesas
RD75P-T2-AZ - 1W POWER MINI MOLD
UPC2758TB-E3-A
UPC2758TB-E3-A
Renesas
SILICON MMIC FREQUENCY DOWNCONVE