RJH65D27BDPQ-A0#T2

Images are for reference only
See Product Specifications

Mfr. #:

RJH65D27BDPQ-A0#T2

Mfr.:

Renesas Electronics America Inc

Описание:

IGBT TRENCH 650V 100A TO247A

Упаковка:

Tube

Datasheet:

RJH65D27BDPQ-A0#T2 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	RJH65D27BDPQ-A0#T2
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - IGBTs - Single
Производитель:	Renesas Electronics America Inc
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
IGBT Type:	83adcbcb4a85dcd5d88d2e35aa8de282
Voltage - Collector Emitter Breakdown (Max):	347f255197950e6b02089b73b6a8acdd
Current - Collector (Ic) (Max):	922dea8deaffd5956749f30180649e0e
Current - Collector Pulsed (Icm):	336d5ebc5436534e61d16e63ddfca327
Vce(on) (Max) @ Vge, Ic:	4b583bcb50b0675a8035f74ebebc3ac7
Power - Max:	393c29d6e158c762f26956555c0d1a45
Switching Energy:	c5ad5838aba53575946fd5b40605e076
Input Type:	eb6d8ae6f20283755b339c0dc273988b
Gate Charge:	49bc4e10480fc5d7b6889ba2bd2a1d25
Td (on/off) @ 25°C:	72de234cf19a20ac27a467a1d7c5bf1d
Test Condition:	c7d1bbcdd3a28d7a01870ecd983ac773
Reverse Recovery Time (trr):	0bddd2e59a3103d8b7c18efcf09969e0
Operating Temperature:	dfb4ad46e1ac805451b8f397e97630b4
Mounting Type:	506558024381a3c368cb88e9e94f6845
Package / Case:	748a8539a6c3c7dbdb455218c72fac40
Supplier Device Package:	84f5980ab1e0062073a10db966d24d90