RJK03E1DNS-00#J5

RJK03E1DNS-00#J5

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RJK03E1DNS-00#J5
Описание:
POWER FIELD-EFFECT TRANSISTOR
Упаковка:
Bulk
Datasheet:
RJK03E1DNS-00#J5 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:RJK03E1DNS-00#J5
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Renesas Electronics America Inc
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:8b36ca816ccce3ea664e770ea1bde73d
Drive Voltage (Max Rds On, Min Rds On):336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:7ca0f11c0d83a8cc7dc32354e6576773
Vgs(th) (Max) @ Id:336d5ebc5436534e61d16e63ddfca327
Gate Charge (Qg) (Max) @ Vgs:d79d564882ce51114458a4c8abcb5007
Vgs (Max):336d5ebc5436534e61d16e63ddfca327
Input Capacitance (Ciss) (Max) @ Vds:6c4a7bcd82799362f03295b58ca342ea
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):acf8b513969707e81e587d1a13d963ad
Operating Temperature:a05f788eae82918882d3b91ce435570b
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:c0109577310599c6822d3831b1178558
Package / Case:369f3769eeeca8edfced5aeea243bc44
In Stock: 80000
Stock:
80000 Can Ship Immediately
  • Делиться:
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