RJK0852DPB-WS#J5

RJK0852DPB-WS#J5

Images are for reference only
See Product Specifications

RJK0852DPB-WS#J5
Описание:
IGBT
Упаковка:
Tray
Datasheet:
RJK0852DPB-WS#J5 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:RJK0852DPB-WS#J5
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Renesas Electronics America Inc
Упаковка:Tray
Product Status:ec30c235d0eb792797af1aa1d11759a7
FET Type:336d5ebc5436534e61d16e63ddfca327
Technology:336d5ebc5436534e61d16e63ddfca327
Drain to Source Voltage (Vdss):336d5ebc5436534e61d16e63ddfca327
Current - Continuous Drain (Id) @ 25°C:336d5ebc5436534e61d16e63ddfca327
Drive Voltage (Max Rds On, Min Rds On):336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:336d5ebc5436534e61d16e63ddfca327
Vgs(th) (Max) @ Id:336d5ebc5436534e61d16e63ddfca327
Gate Charge (Qg) (Max) @ Vgs:336d5ebc5436534e61d16e63ddfca327
Vgs (Max):336d5ebc5436534e61d16e63ddfca327
Input Capacitance (Ciss) (Max) @ Vds:336d5ebc5436534e61d16e63ddfca327
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):336d5ebc5436534e61d16e63ddfca327
Operating Temperature:336d5ebc5436534e61d16e63ddfca327
Mounting Type:336d5ebc5436534e61d16e63ddfca327
Supplier Device Package:336d5ebc5436534e61d16e63ddfca327
Package / Case:336d5ebc5436534e61d16e63ddfca327
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
IPI65R110CFD
IPI65R110CFD
Infineon Technologies
N-CHANNEL POWER MOSFET
BUK7660-100A,118
BUK7660-100A,118
NXP Semiconductors
NEXPERIA BUK7660 - N-CHANNEL TRE
IPL65R230C7AUMA1
IPL65R230C7AUMA1
Infineon Technologies
MOSFET N-CH 650V 10A 4VSON
STP11NM60FD
STP11NM60FD
STMicroelectronics
MOSFET N-CH 600V 11A TO220AB
SIHP065N60E-GE3
SIHP065N60E-GE3
Vishay Siliconix
MOSFET N-CH 600V 40A TO220AB
SQM60N06-15_GE3
SQM60N06-15_GE3
Vishay Siliconix
MOSFET N-CH 60V 56A TO263
IPD50N03S4L06ATMA1
IPD50N03S4L06ATMA1
Infineon Technologies
MOSFET N-CH 30V 50A TO252-31
IPD40DP06NMATMA1
IPD40DP06NMATMA1
Infineon Technologies
MOSFET P-CH 60V 4.3A TO252-3
TPC8014(TE12L,Q,M)
TPC8014(TE12L,Q,M)
Toshiba Semiconductor and Storage
MOSFET N-CH 30V 11A 8SOP
RQA0009SXAQS#H1
RQA0009SXAQS#H1
Renesas Electronics America Inc
MOSFET N-CH 16V 3.2A UPAK
FDY100PZ-G
FDY100PZ-G
onsemi
MOSFET P-CH SC89
RQ5E030AJTCL
RQ5E030AJTCL
Rohm Semiconductor
MOSFET N-CHANNEL 30V 3A TSMT3
Вас также может заинтересовать
XLH52V012.288000X
XLH52V012.288000X
Renesas Electronics America Inc
XTAL OSC VCXO 12.2880MHZ HCMOS
QB-V850EIX3-S100GC
QB-V850EIX3-S100GC
Renesas Electronics America Inc
V850E IX3 IECUBE 100 QFP S-TYPE
HZS6.2NB3TA-E
HZS6.2NB3TA-E
Renesas Electronics America Inc
DIODE ZENER
8N3DV85AC-0118CDI8
8N3DV85AC-0118CDI8
Renesas Electronics America Inc
IC OSC VCXO DUAL FREQ 6-CLCC
8N3DV85FC-0036CDI8
8N3DV85FC-0036CDI8
Renesas Electronics America Inc
IC OSC VCXO DUAL FREQ 6-CLCC
8N4Q001FG-0120CDI
8N4Q001FG-0120CDI
Renesas Electronics America Inc
IC OSC CLOCK QD FREQ 10CLCC
ISL23511UFB8Z
ISL23511UFB8Z
Renesas Electronics America Inc
IC DGTL POT 50KOHM 32TAP 8SOIC
HD6417612RFV
HD6417612RFV
Renesas Electronics America Inc
RISC MICROCONTROLLER, 32-BIT, 60
R5F101BDANA#U0
R5F101BDANA#U0
Renesas Electronics America Inc
IC MCU 16BIT 48KB FLASH 32HWQFN
R5F104BFGNA#U0
R5F104BFGNA#U0
Renesas Electronics America Inc
IC MCU 16BIT 96KB FLASH 32HWQFN
70914S25J8
70914S25J8
Renesas Electronics America Inc
IC SRAM 36KBIT PARALLEL 68PLCC
X5325P-4.5A
X5325P-4.5A
Renesas Electronics America Inc
IC SUPERVISOR 1 CHANNEL 8DIP