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See Product Specifications
| номер части: | RJK1001DPN-E0#T2 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Renesas Electronics America Inc |
| Упаковка: | Tube |
| Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 227b5c7c7a2ed2ea3da210ed0860030d |
| Current - Continuous Drain (Id) @ 25°C: | 601ada6013b29b233e457e2a2c519cc4 |
| Drive Voltage (Max Rds On, Min Rds On): | 336d5ebc5436534e61d16e63ddfca327 |
| Rds On (Max) @ Id, Vgs: | a37bf56b43c1418a81b24559ff84835f |
| Vgs(th) (Max) @ Id: | 336d5ebc5436534e61d16e63ddfca327 |
| Gate Charge (Qg) (Max) @ Vgs: | 6a5896d79ca9132885dc7a8e1f2c814f |
| Vgs (Max): | 336d5ebc5436534e61d16e63ddfca327 |
| Input Capacitance (Ciss) (Max) @ Vds: | 60930a8cb4c4e0479dcc77e668f9ad41 |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | a8b3f64040b1225c2cc8b3728386572f |
| Operating Temperature: | a05f788eae82918882d3b91ce435570b |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Supplier Device Package: | 9b3b590b14408ced9e56cc56696084a1 |
| Package / Case: | 46bb638de2ea693de650d7f1c3115468 |
