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See Product Specifications
| номер части: | RJK2009DPM-00#T0 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Renesas Electronics America Inc |
| Упаковка: | Tube |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | b86aa01bc1f9484a191794819edcfc06 |
| Current - Continuous Drain (Id) @ 25°C: | e50dae7122d252f8a7317c11068ffb56 |
| Drive Voltage (Max Rds On, Min Rds On): | 76f7bec4411c6fbb49ed5d21d8974faf |
| Rds On (Max) @ Id, Vgs: | 4c8956c4dd7411c2f8da4329c6d79ca7 |
| Vgs(th) (Max) @ Id: | 336d5ebc5436534e61d16e63ddfca327 |
| Gate Charge (Qg) (Max) @ Vgs: | 0e5e0c17b2bce4b4fdcaa9216e9ca15b |
| Vgs (Max): | 972af1bbf385e6f2ec41d2be6228bd7e |
| Input Capacitance (Ciss) (Max) @ Vds: | d10d2c6ff67938a1d3687e8f08d0c91c |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | 4d11c3d72a44f4227b1e9af62cf6d238 |
| Operating Temperature: | 336d5ebc5436534e61d16e63ddfca327 |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Supplier Device Package: | 7261c27e98ea46ebdf0b30018de3c13e |
| Package / Case: | a02e0d1a928de3366340ceae094aecd8 |
