RJK4006DPD-00#J2

RJK4006DPD-00#J2

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RJK4006DPD-00#J2
Описание:
POWER FIELD-EFFECT TRANSISTOR
Упаковка:
Bulk
Datasheet:
RJK4006DPD-00#J2 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:RJK4006DPD-00#J2
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Renesas Electronics America Inc
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):a51e6c3b115ead349deb13cbf5a43f23
Current - Continuous Drain (Id) @ 25°C:3f9b80b2313763e17eb9d4414601dfee
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:2faa2b2b163f041ef13bb88c94609a06
Vgs(th) (Max) @ Id:336d5ebc5436534e61d16e63ddfca327
Gate Charge (Qg) (Max) @ Vgs:0dd58e464fbd9aa4ecb11445a1cff0fc
Vgs (Max):972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:0ca34ec6ac61eb57a255bbc76879d08e
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):9a89cc95043fae4e2135b24e293ac5c9
Operating Temperature:a05f788eae82918882d3b91ce435570b
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:f67cce4f4d595b625e324988615893b3
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
In Stock: 33000
Stock:
33000 Can Ship Immediately
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