RJK6026DPE-00#J3

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Mfr. #:

RJK6026DPE-00#J3

Mfr.:

Renesas Electronics America Inc

Описание:

MOSFET N-CH 600V 5A 4LDPAK

Упаковка:

Tube

Datasheet:

RJK6026DPE-00#J3 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	RJK6026DPE-00#J3
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Renesas Electronics America Inc
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	9b63fe166715207d51445c226ada9c46
Current - Continuous Drain (Id) @ 25°C:	d59d0f233fe79879c037a2476500de6f
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	eb22add6b550f48d0178f159a06c405c
Vgs(th) (Max) @ Id:	336d5ebc5436534e61d16e63ddfca327
Gate Charge (Qg) (Max) @ Vgs:	f7fb58f6f88663872c1cfe2690a9fe45
Vgs (Max):	972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:	0c4a904c482b53860a9a01c5c22c901f
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	e6115e6b64f7d623eb1f668cebc67c58
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	6260991c34710c5aa8fc14fd93c922f7
Package / Case:	75e2ba04b81e44768adf536f9d0a3803