RJP65T54DPM-A0#T2

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See Product Specifications

Mfr. #:

RJP65T54DPM-A0#T2

Mfr.:

Renesas Electronics America Inc

Описание:

IGBT TRENCH 650V 60A TO-3PFP

Упаковка:

Tube

Datasheet:

RJP65T54DPM-A0#T2 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	RJP65T54DPM-A0#T2
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - IGBTs - Single
Производитель:	Renesas Electronics America Inc
Упаковка:	Tube
Product Status:	ec30c235d0eb792797af1aa1d11759a7
IGBT Type:	83adcbcb4a85dcd5d88d2e35aa8de282
Voltage - Collector Emitter Breakdown (Max):	347f255197950e6b02089b73b6a8acdd
Current - Collector (Ic) (Max):	4c7be7db0ed1160a2dfac6e29929b43d
Current - Collector Pulsed (Icm):	336d5ebc5436534e61d16e63ddfca327
Vce(on) (Max) @ Vge, Ic:	dc274b7368715ba1910345815976757c
Power - Max:	6409e98d9479c6e48f0c53840b0eab4e
Switching Energy:	2d962b974e8bbdc503a876bb8ba34d77
Input Type:	eb6d8ae6f20283755b339c0dc273988b
Gate Charge:	0295cce6a6cb5e7b87a4674d21b4df33
Td (on/off) @ 25°C:	ded24fd9dd89bc2cca87c2f00f1385c7
Test Condition:	20e69de00a79b9e4c73bf1d893ef64df
Reverse Recovery Time (trr):	336d5ebc5436534e61d16e63ddfca327
Operating Temperature:	dfb4ad46e1ac805451b8f397e97630b4
Mounting Type:	506558024381a3c368cb88e9e94f6845
Package / Case:	5b3a06fb357090a14a795a20e7fde468
Supplier Device Package:	d801dd65839b2ebddf83ea7a7d214e10