UPA2680T1E-E2-AT

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See Product Specifications

Mfr. #:

UPA2680T1E-E2-AT

Mfr.:

Renesas Electronics America Inc

Описание:

MOSFET N-CH 20V 3A 6MLP

Упаковка:

Bulk

Datasheet:

UPA2680T1E-E2-AT Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	UPA2680T1E-E2-AT
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Renesas Electronics America Inc
Упаковка:	Bulk
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	1d4b1d1d0414ed964cb9de7f5a150f63
Current - Continuous Drain (Id) @ 25°C:	52e93565a89abe7c2cd3408249a5dc5b
Drive Voltage (Max Rds On, Min Rds On):	336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:	e0c95617ceda0e3e6ddcb65ce5d5ef6f
Vgs(th) (Max) @ Id:	47646805bddee9d06a7f0cc80c73c037
Gate Charge (Qg) (Max) @ Vgs:	399e34e067b624c6414a1ae127dcc33e
Vgs (Max):	336d5ebc5436534e61d16e63ddfca327
Input Capacitance (Ciss) (Max) @ Vds:	419b1c916705b9baf81c256fa95edd58
FET Feature:	6ddb2436bf1d98a374a4c8e5a45f901a
Power Dissipation (Max):	336d5ebc5436534e61d16e63ddfca327
Operating Temperature:	336d5ebc5436534e61d16e63ddfca327
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	8b1a28b736124db9f20a81cf7ba1210e
Package / Case:	33b300e811acb8c04f0dfe07cf7d0135