UPA2723UT1A-E1-AY

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Mfr. #:

UPA2723UT1A-E1-AY

Mfr.:

Renesas Electronics America Inc

Описание:

MOSFET N-CH 30V 33A 8DFN

Упаковка:

Bulk

Datasheet:

UPA2723UT1A-E1-AY Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	UPA2723UT1A-E1-AY
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Renesas Electronics America Inc
Упаковка:	Bulk
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:	5d3daab095c9fca6e6bd16f959a8a2cc
Drive Voltage (Max Rds On, Min Rds On):	336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:	838de355385e7a2087ce14fbf08cab73
Vgs(th) (Max) @ Id:	a7c6093f80ca0dfc858bc53da7afe406
Gate Charge (Qg) (Max) @ Vgs:	98e257ffecf3ed9528be1ada7b163284
Vgs (Max):	336d5ebc5436534e61d16e63ddfca327
Input Capacitance (Ciss) (Max) @ Vds:	b28964773352fbb1e43fec5d913a7b38
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	336d5ebc5436534e61d16e63ddfca327
Operating Temperature:	336d5ebc5436534e61d16e63ddfca327
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	737d34af55f7c995b36a5018da7f208e
Package / Case:	c79ca9f723e3537386b66c9c45d603c8