UPA2802T1L-E2-AY

Images are for reference only
See Product Specifications

Mfr. #:

UPA2802T1L-E2-AY

Mfr.:

Renesas Electronics America Inc

Описание:

MOSFET N-CH 20V 18A 8DFN

Упаковка:

Bulk

Datasheet:

UPA2802T1L-E2-AY Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	UPA2802T1L-E2-AY
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Renesas Electronics America Inc
Упаковка:	Bulk
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	1d4b1d1d0414ed964cb9de7f5a150f63
Current - Continuous Drain (Id) @ 25°C:	66ab69b459c614644a63dc0c3e22ff0d
Drive Voltage (Max Rds On, Min Rds On):	336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:	2f145558fda15eb2d7b897709445f701
Vgs(th) (Max) @ Id:	a7c6093f80ca0dfc858bc53da7afe406
Gate Charge (Qg) (Max) @ Vgs:	a0a9f684404236742788c46535506ccd
Vgs (Max):	336d5ebc5436534e61d16e63ddfca327
Input Capacitance (Ciss) (Max) @ Vds:	9404cb923dde9d1e2e545030af37dce7
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	336d5ebc5436534e61d16e63ddfca327
Operating Temperature:	336d5ebc5436534e61d16e63ddfca327
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	737d34af55f7c995b36a5018da7f208e
Package / Case:	c79ca9f723e3537386b66c9c45d603c8