UPA2812T1L-E1-AT

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See Product Specifications

Mfr. #:

UPA2812T1L-E1-AT

Mfr.:

Renesas Electronics America Inc

Описание:

MOSFET P-CH 30V 30A 8HVSON

Упаковка:

Tape & Reel (TR)

Datasheet:

UPA2812T1L-E1-AT Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	UPA2812T1L-E1-AT
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Renesas Electronics America Inc
Упаковка:	Tape & Reel (TR)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	9945a529f9f3f7e23d6cd49cab56133a
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:	b5a4f17035c9cf549f5adf4038dff86d
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	28a7f031eb7531353a96e070f8685644
Vgs(th) (Max) @ Id:	336d5ebc5436534e61d16e63ddfca327
Gate Charge (Qg) (Max) @ Vgs:	f1e9e5f5ca4554397dea1bfdf1aa69c6
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	40be3ae3312c4774f6aaca1ab1873677
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	ec1761506bdc661b26a3ab15fbb59544
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	6c36ac98d5f64a4257df7f340d5711e5
Package / Case:	67fd376bd79eda48286f8f6e0131d8c9