UPA2815T1S-E2-AT

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Mfr. #:

UPA2815T1S-E2-AT

Mfr.:

Renesas Electronics America Inc

Описание:

MOSFET P-CH 30V 21A 8HWSON

Упаковка:

Tape & Reel (TR)

Datasheet:

UPA2815T1S-E2-AT Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	UPA2815T1S-E2-AT
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Renesas Electronics America Inc
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	9945a529f9f3f7e23d6cd49cab56133a
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:	2fa340b1be8867144a8b19014f398439
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	e333c3b7e63c57a22a3896c6892c2f3e
Vgs(th) (Max) @ Id:	336d5ebc5436534e61d16e63ddfca327
Gate Charge (Qg) (Max) @ Vgs:	4dd049517aeb42316ab625bd041bdb73
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	4210017f095f288ea84ebb84aa2e27ea
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	a8c66c4442cd4a3041823bb4b268783b
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	c0109577310599c6822d3831b1178558
Package / Case:	369f3769eeeca8edfced5aeea243bc44

In Stock: 0

Stock:

0 Can Ship Immediately