UPA2822T1L-E1-AT

Images are for reference only
See Product Specifications

Mfr. #:

UPA2822T1L-E1-AT

Mfr.:

Renesas Electronics America Inc

Описание:

MOSFET N-CH 30V 34A 8HWSON

Упаковка:

Tape & Reel (TR)

Datasheet:

UPA2822T1L-E1-AT Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	UPA2822T1L-E1-AT
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Renesas Electronics America Inc
Упаковка:	Tape & Reel (TR)
Product Status:	81a04506d9ec7639ad93ec4fd63454ba
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:	59e6fc9ea45d689c2809c4d653f1b606
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	b1a1ec45e64a7834f8ecfe950d7df2a2
Vgs(th) (Max) @ Id:	336d5ebc5436534e61d16e63ddfca327
Gate Charge (Qg) (Max) @ Vgs:	3d5e9e3f101227a13db1137ed298e0eb
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	81402fe4e97f5aed2f93331d23c98224
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	a8c66c4442cd4a3041823bb4b268783b
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	c0109577310599c6822d3831b1178558
Package / Case:	369f3769eeeca8edfced5aeea243bc44