UPA2826T1S-E2-AT

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Mfr. #:

UPA2826T1S-E2-AT

Mfr.:

Renesas Electronics America Inc

Описание:

8P HWSON

Упаковка:

Tray

Datasheet:

UPA2826T1S-E2-AT Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	UPA2826T1S-E2-AT
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Renesas Electronics America Inc
Упаковка:	Tray
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	1d4b1d1d0414ed964cb9de7f5a150f63
Current - Continuous Drain (Id) @ 25°C:	efa8ff81bf0ba9ae7dc160485989f548
Drive Voltage (Max Rds On, Min Rds On):	6969a0b86e9c08dfc1507136c0755a65
Rds On (Max) @ Id, Vgs:	76762dd8d661901d203cf78c2b97aff6
Vgs(th) (Max) @ Id:	ebb6eafd2ac694e26e89d23c09533fc2
Gate Charge (Qg) (Max) @ Vgs:	84b2448b0a862d1a7dfc6e639989f68b
Vgs (Max):	ed5450af4f622d5d61945c0592c793a8
Input Capacitance (Ciss) (Max) @ Vds:	c391d0b517b2bc324cc0c3eba9125987
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	c91436d207e6992225a649cdcfea6f7c
Operating Temperature:	9ba6558c95ad6e5d701d599c4dbbddd6
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	c0109577310599c6822d3831b1178558
Package / Case:	369f3769eeeca8edfced5aeea243bc44

In Stock: 0

Stock:

0 Can Ship Immediately